Use of SiCl4 as silicon precursor for low-temperature halo-carbon epitaxial growth of 4H-SiC

Materials Science Forum

Volumn 645-648, Issue , 2010, Pages 111-114

  Kotamraju, Siva ^a   Krishnan, Bharat ^a   Melnychuk, Galyna ^a   Koshka, Yaroslav ^a  

^a MISSISSIPPI STATE UNIVERSITY   (United States)

Author keywords

Halo carbon; Low temperature epitaxial growth

Indexed keywords

CARBON; EPITAXIAL GROWTH; GROWTH RATE; MORPHOLOGY; NUCLEATION; SILICON CARBIDE; TEMPERATURE;

CARBON PRECURSORS; HOMOGENEOUS NUCLEATION; LOW GROWTH TEMPERATURE; LOW TEMPERATURE EPITAXIAL GROWTH; MORPHOLOGY DEGRADATION; POLYCRYSTALLINE SIC; SILICON PRECURSORS; TRIANGULAR DEFECTS;

CHLORINE COMPOUNDS;

EID: 77955453374     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.645-648.111     Document Type: Conference Paper

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