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Materials Science Forum

Volumn 615 617, Issue , 2009, Pages 37-40

High temperature solution growth on free-standing (001) 3C-SiC epilayers

(4) Tanaka, Ryo a Seki, Kazuaki a Ujihara, Toru a Takeda, Yoshikazu a

a NAGOYA UNIVERSITY (Japan)

Author keywords

3C SiC; Dipping method; Solution growth; Stacking faults

Indexed keywords

EPILAYERS; STACKING FAULTS; SUBSTRATES;

3C-SIC; DIPPING METHOD; GROWN CRYSTALS; HIGH TEMPERATURE SOLUTIONS; SEED CRYSTAL; SI SUBSTRATES; SIC EPILAYERS; SOLUTION GROWTH;

SILICON CARBIDE;

EID: 77955449080 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/MSF.615-617.37 Document Type: Conference Paper

Times cited : (1)

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