Theory of neutral divacancy in SiC: A defect for spintronics

Materials Science Forum

Volumn 645-648, Issue , 2010, Pages 395-397

  Gali, A ^a   Gallstrom A ^b   Son, N T ^b   Janzen E ^b  

^a BUDAPEST UNIVERSITY OF TECHNOLOGY AND ECONOMICS   (Hungary)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

Divacancy; EPR; PL; Spintronics

Indexed keywords

CALCULATIONS; DEFECTS; GROUP THEORY; PARAMAGNETIC RESONANCE; SPINTRONICS;

DIVACANCIES; FIRST-PRINCIPLES CALCULATION; GROUP THEORY ANALYSIS; SPIN STATE;

SILICON CARBIDE;

EID: 77955439541     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.645-648.395     Document Type: Conference Paper

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