The electronic structure of the UD-4 defect in 4H, 6H and 15R SiC

Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 397-400

  Gällström, Andreas ^a   Magnusson, Björn ^a,b   Thuaire, Aurelie ^a   Paskov, Plamen ^a   Henry, Anne ^a   Janzén, Erik ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b Norstel AB   (Sweden)

Author keywords

Deep level defects; Photoluminescence; Zeeman effect

Indexed keywords

DEFECTS; ELECTRONIC STRUCTURE; SILICON CARBIDE;

DEEP-LEVEL DEFECTS; ELECTRONIC.STRUCTURE; ENERGY; HIGHEST TEMPERATURE; LOWER ENERGIES; LUMINESCENCE LINES; PHONON LINES; SEMI-INSULATING; TEMPERATURE BEHAVIOR; ZEEMAN EFFECT;

PHOTOLUMINESCENCE;

EID: 63849229915     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.600-603.397     Document Type: Conference Paper

References (3)

1. B. Magnusson and E. Janzén: Materials Science Forum Vols. 483-485 (2005), P 341
2. A. Thuaire, A. Henry, B. Magnusson, J.P. Bergman, W.M. Chen, E. Janzén, M. Mermoux and E. Bano: Materials Science Forum Vols. 527-529 (2006) pp. 461-464
3. Mt. Wagner, B. Magnusson, W.M. Chen, and E. Janzén: Phys. Rev. B 66 (2002), 115204