Field effect transistors based on catalyst-free grown 3C-SiC nanowires

Materials Science Forum

Volumn 645-648, Issue , 2010, Pages 1235-1238

  Rogdakis, K ^a,b   Bano, E ^a   Montes, L ^a   Bechelany, M ^c   Cornu, D ^d   Zekentes, K ^b  

^a IMEP LAHC   (France)

^b INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

^c UNIVERSITÉ CLAUDE BERNARD LYON 1   (France)

^d UNIVERSITÉ DE MONTPELLIER   (France)

Author keywords

3C SiC; FET; Nanowire

Indexed keywords

CARRIER CONCENTRATION; CATALYSTS; ELECTRIC FIELD EFFECTS; NANOWIRES; SILICON CARBIDE;

3C-SIC; ELECTRICAL CHARACTERIZATION; ELECTRICAL CONDUCTION; EXTRACT INFORMATIONS; FIELD EFFECT TRANSISTOR (FETS); HIGH ELECTRON CONCENTRATION; SILVACO SIMULATION; UNINTENTIONAL DOPING;

FIELD EFFECT TRANSISTORS;

EID: 77955433926     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.645-648.1235     Document Type: Conference Paper

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