A wafer-scale etching technique for high aspect ratio implantable MEMS structures

Sensors and Actuators, A: Physical

Volumn 162, Issue 1, 2010, Pages 130-136

  Bhandari, R ^a   Negi, S ^a   Rieth, L ^a   Solzbacher, F ^a  

^a University of Utah   (United States)

Author keywords

HF HNO3 wet etching; High aspect ratio; Microelectrodes; Neural interface; Utah electrode array (UEA)

Indexed keywords

ARRAY FABRICATION; ELECTRODE ARRAYS; ETCHING CONDITION; ETCHING METHOD; ETCHING PROCESS; ETCHING RATE; ETCHING TECHNIQUE; ETCHING TIME; HIGH ASPECT RATIO; LOWER COST; MEMS-STRUCTURE; MICRO-SYSTEM TECHNOLOGIES; MICROELECTRODE ARRAY; NEEDLE SHAPE; NEURAL INTERFACES; NEURAL TISSUE; NONUNIFORMITY; ON-WAFER; OPTIMUM ETCHING CONDITION; PROCESSING TIME; SHARP TIP; STIRRING RATES; SUBSTANTIAL REDUCTION; UTAH ELECTRODE ARRAY (UEA); VARIABLE GEOMETRY; WAFER-SCALE;

ASPECT RATIO; HYDROFLUORIC ACID; MICROELECTRODES; NITRIC ACID; PHOTORESISTS; PRESSURE DROP; SILICON WAFERS; SURFACE DEFECTS;

WET ETCHING;

EID: 77955417168     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2010.06.011     Document Type: Article

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