Properties of CdS films deposited by the electron beam evaporation technique

Journal of Alloys and Compounds

Volumn 503, Issue 1, 2010, Pages 170-176

  Sivaramamoorthy, K ^a   Asath Bahadur, S ^a,b   Kottaisamy, M ^a,b   Murali, K R ^a,c  

^a Rajapalayam Rajus College   (India)

^b KALASALINGAM UNIVERSITY   (India)

^c CENTRAL ELECTROCHEMICAL RESEARCH INSTITUTE   (India)

Author keywords

Electronic materials; II VI; Semiconductors; Thin films

Indexed keywords

BAND GAPS; CDS; CDS FILMS; CHEMICAL METHOD; CLEAN GLASS SUBSTRATES; DEPOSITION OF FILMS; ELECTRON BEAM EVAPORATION; ELECTRONIC MATERIALS; GRAIN SIZE; HEXAGONAL STRUCTURES; HIGH SIGNAL-TO-NOISE RATIO; II-VI SEMICONDUCTOR; PHOTOCONDUCTIVE CELLS; POLYCRYSTALLINE; SUBSTRATE TEMPERATURE; UNDOPED FILMS; X-RAY DIFFRACTION STUDIES;

CADMIUM COMPOUNDS; CADMIUM SULFIDE; DATA STORAGE EQUIPMENT; ELECTRON BEAMS; PHOTOCONDUCTIVITY; SIGNAL TO NOISE RATIO; SUBSTRATES; SURFACE ROUGHNESS; THIN FILMS; X RAY DIFFRACTION;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 77955306530     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2010.04.227     Document Type: Article

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