Structural, compositional, and optoelectronic properties of thin-film CdS on p-GaAs prepared by pulsed-laser deposition

Thin Solid Films

Volumn 518, Issue 7, 2010, Pages 1784-1787

  Acharya, K P ^a   Mahalingam, K ^b   Ullrich, B ^a,b  

^a BOWLING GREEN STATE UNIVERSITY   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

Cds GaAs heterostructures; Deposition rate; Photocurrent; Pulsed laser deposition; Thin film Cds

Indexed keywords

ABLATION THRESHOLDS; AMORPHOUS MATRICES; CDS; CDS FILMS; CDS/GAAS HETEROSTRUCTURES; ENERGY DISPERSIVE ANALYSIS OF X-RAYS; FLUENCES; GAAS; HETERO-PAIRING; HETEROSTRUCTURES; LOW TEMPERATURES; NANO-SIZED CRYSTALLITES; ND : YAG LASERS; OPTOELECTRONIC INTERCONNECTS; OPTOELECTRONIC PROPERTIES; PHOTOCURRENT SPECTROSCOPY; RESPONSIVITY; ROOM TEMPERATURE; STOICHIOMETRIC COMPOSITIONS; X-RAY INVESTIGATIONS;

AMORPHOUS FILMS; CADMIUM COMPOUNDS; CADMIUM SULFIDE; CRYSTALS; DATA STORAGE EQUIPMENT; DEPOSITION; DEPOSITION RATES; ELECTRON PROBE MICROANALYSIS; GALLIUM ALLOYS; GALLIUM ARSENIDE; PHOTOCURRENTS; PROGRAMMABLE LOGIC CONTROLLERS; PULSED LASER DEPOSITION; PULSED LASERS; SEMICONDUCTING GALLIUM; THIN FILM DEVICES;

NEODYMIUM LASERS;

EID: 73949154881     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.09.032     Document Type: Article

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