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Chemical Physics Letters

Volumn 494, Issue 4-6, 2010, Pages 269-273

Effect of H2 ambient annealing on silicon nanowires prepared by atmospheric pressure chemical vapor deposition

(5) Swain, Bhabani S a Lee, Sung S a Lee, Sang H a Swain, Bibhu P b Hwang, Nong M a

a Seoul National University (South Korea)

b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION; BLUE SHIFT; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; FT-IR SPECTRUM; LONGITUDINAL OPTICS; PEAK POSITION; SILICON NANOWIRES; TRANSVERSE OPTICS; VIBRATION BANDS; VIBRATIONAL PROPERTIES;

ANNEALING; ATMOSPHERIC CHEMISTRY; ATMOSPHERIC PRESSURE; CHEMICAL VAPOR DEPOSITION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; FOURIER TRANSFORMS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NANOWIRES; SCANNING ELECTRON MICROSCOPY; WAVELET TRANSFORMS;

SILICON;

EID: 77955303387 PISSN: 00092614 EISSN: None Source Type: Journal
DOI: 10.1016/j.cplett.2010.06.028 Document Type: Article

Times cited : (18)

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