Wetting and adhesion of Si on Si3N4 and BN substrates

Journal of the European Ceramic Society

Volumn 29, Issue 11, 2009, Pages 2363-2367

  Drevet, B ^a   Voytovych, R ^b   Israel, R ^a,b   Eustathopoulos, N ^b  

^a Laboratoire Composants Solaires CEA INES RDI   (France)

^b UNIV GRENOBLE ALPES   (France)

Author keywords

Interfaces; Nitrides

Indexed keywords

INTERFACES; MOLTEN SILICON; NEUTRAL GAS; PRINCIPAL FACTORS; ROOM TEMPERATURE; SESSILE DROP TECHNIQUES; THERMO-MECHANICAL STRESS;

ADHESION; BORON; BORON NITRIDE; DROPS; NITRIDES; SCANNING ELECTRON MICROSCOPY; STRESSES; WETTING;

MELTING POINT;

EID: 67349247507     PISSN: 09552219     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jeurceramsoc.2009.01.024     Document Type: Article

References (20)

1. Maeda Y., Yokoyama T., Hide I., Matsuyama T., and Sawaya K. Releasing material for the growth of shaped silicon crystals. J. Electrochem. Soc. 133 (1986) 440-443
2. Cröll A., Lantzsch R., Kitanov S., Salk N., Szofran F.R., and Tegetmeier A. Melt-crucible wetting behavior in semiconductor melt growth systems. Cryst. Res. Technol. 38 (2003) 669-675
3. Beck A., Geissler J., and Helmreich D. Substrate development for the growth of silicon foils by ramp assisted foil casting technique (RAFT). J. Cryst. Growth 104 (1990) 113-118
4. Saito T., Shimura A., and Ichikawa S. A new directional solidification technique for polycrystalline solar grade silicon. XV IEEE Photovoltaic Specialists Conference (1981) 576-580
5. Yuan Z., Huang W.L., and Mukai K. Wettability and reactivity of molten silicon with various substrates. Appl. Phys. A 78 (2004) 617-622
6. Li J.G., and Hausner H. Influence of oxygen partial pressure on the wetting behaviour of silicon nitride by molten silicon. J. Eur. Ceram. Soc. 9 (1992) 101-105
7. 4 by Si and a method for calculating the surface energies involved. In: Pask J., and Evans A. (Eds). Surfaces and Interfaces in Ceramic and Ceramic-Metal Systems (1981), Plenum Press, New York 457-466
8. Champion J.A., Keene B.J., and Allen S. Wetting of refractory materials by molten metallides. J. Mater. Sci. 8 (1973) 423-426
9. Naidich Y.V. The wettability of solids by liquid metals. In: Cadenhead D.A., and Danielli J.F. (Eds). Progress in Surface and Membrane Science vol. 14 (1981), Academic Press, New York 353-484
10. 2S-FeS melts. Metall. Mater. Trans. B 38 (2007) 347-349
11. Eustathopoulos N., Nicholas M., and Drevet B. Wettability at high temperature. Pergamon Materials Series vol. 3 (1999), Pergamon, Oxford, UK
12. Saiz E., and Tomsia A.P. Atomic dynamics and Marangoni films during liquid-metal spreading. Nat. Mater. 3 (2004) 903-909
13. Naidich Y.V., Zabuga V.V., and Perevertailo V.M. Temperature effect on the kinetics of spreading and wetting in systems with different character of interaction of contacting phases. Adgeziya rasplavov i paika materialov 27 (1992) 23-24
14. Dezellus O., Hodaj F., Rado C., Barbier J.N., and Eustathopoulos N. Spreading of Cu-Si alloys on oxidized SiC in vacuum: experimental results and modelling. Acta Mater. 50 (2002) 979-991
15. 2 by azeotropic Au-Ni. Acta Mater. 55 (2007) 6316-6321
16. Raider S.I., Flitsch R., Aboaf J.A., and Pliskin W.A. Surface oxidation of silicon nitride films. J. Electrochem. Soc. 123 (1976) 560-565
17. Cassie A.B.D. Contact angles. Discuss. Faraday Soc. 3 (1948) 11-16
18. Nist-Janaf Thermochemical Tables, J. Phys. Chem. Ref. Data, Monograph No. 9, 4th edition, 1998.
19. Eustathopoulos N. Progress in understanding and modeling reactive wetting of metals on ceramics. Curr. Opin. Solid State Mater. Sci. 9 (2005) 152-160
20. Eustathopoulos N., Sobczak N., Passerone A., and Nogi K. Measurement of contact angle and work of adhesion at high temperature. J. Mater. Sci. 40 (2005) 2271-2280