Insertion bonding: A novel Cu-Cu bonding approach for 3D integration

Proceedings - Electronic Components and Technology Conference

Volumn , Issue , 2010, Pages 1370-1375

  Okoro, Chukwudi ^a,b   Agarwal, Rahul ^a   Limaye, Paresh ^a   Vandevelde, Bart ^a   Vandepitte, Dirk ^b   Beyne, Eric ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

3-D INTEGRATION; BOND FORMATION; BOND INTERFACE; BONDING CONDITIONS; BONDING TECHNIQUES; BONDING TEMPERATURES; ELECTRICAL CONTACTS; EXPERIMENTAL STUDIES; FINITE-ELEMENT STUDY; HIGH SHEAR; LOW TEMPERATURES; METAL-METAL CONTACTS; RESISTANCE MEASUREMENT; ROOM TEMPERATURE; STACKED DIE;

PLASTIC DEFORMATION;

SURFACE CLEANING;

EID: 77955210504     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECTC.2010.5490641     Document Type: Conference Paper

References (11)

1. th ECTC, San Diego, USA, May 2009, pp. 11-13
2. B. Derby et al, "Theoretical Model for Diffusion Bonding", Metal Science, Vol.16, Jan. 1982, pp. 49-56.
3. C. S. Tan et al, "Cu-Cu Diffusion Bonding Enhancement at Low temperature by Surface Passivation using Self- Assembled Monolayer of Alkane-thiol", Applied Physics Letters, Vol.95, 2009, pp. 192108-1-3
4. G. Q. Wu et al, "Dynamic Simulation of Solid-Sate Diffusion Bonding", Material Sci. Eng. A, 452-453, 2007, pp. 529-535.
5. K. N. Chen et al, "Morphology and Bond Strength of Copper Wafer Bonding, Electrochemical and Solid-State Letters", Vol.7, No.1, 2004, pp. G14-G16
6. W. Ruythooren et al, "Direct Cu-Cu Thermo- Compression Bonding for 3D-Stacked IC integration", Proc. IMAPS, San Diego, USA, Oct. 2006.
7. Y. I. Kim et al, "Thermal Degradation of DRAM Retention Time: Characterization and Improving Techniques," in IEEE 42nd IRPS Proc., 2004, pp. 667-668.
8. A. Hill et al, "Modeling Solid-State Diffusion Bonding", Acta Metall., Vol.37, No.9, 1989, pp. 2425-2437
9. th Eurosime, Freiburg, Germany, April 2008, pp. 179-183
10. B. Swinnen et al., "3D integration by Cu-Cu thermo compression bonding of extremely thinned bulk Si dies containing 10μm pitch through Si vias", Proc. IEDM Conf., 2006, San Francisco, USA.
11. G. Van Der Plas et al., "Design Issues and Considerations for Low-Cost 3D TSV IC Technology", ISSCC Conf., Feb. 2010, San Francisco, USA, pp. 148-150