Thermal degradation of DRAM retention time: Characterization and improving techniques

IEEE International Reliability Physics Symposium Proceedings

Volumn 2004-January, Issue January, 2004, Pages 667-668

  Kim, Y I ^a   Yang, K H ^a   Lee, W S ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

DRAM; Fluorine; Hydrogen; Retention time; Thermal stress; Thermal variation

Indexed keywords

DYNAMIC RANDOM ACCESS STORAGE; FLUORINE; HYDROGEN; THERMAL STRESS;

DRAM CELLS; FLUORINE IMPLANTATION; HYDROGEN ANNEALING; IMPROVING TECHNIQUES; RELIABILITY PROBLEMS; RETENTION TIME; THERMAL VARIATION;

RELIABILITY;

EID: 77955763418     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2004.1315442     Document Type: Conference Paper

References (2)

1. P. J, Restle, J. W, Park, and B. V. Lloyd, "DRAM Variable Retention Time, " International Electron Devices Meeting. Technical Digest. IEEE, New York, NY 1992, pp. 807-810.
2. K. L. Brewer and S. M. Myers, "Chemical Kinetics of Hydrogen and (111) Si-Sio2 Interface Defects, " Appl Phys. Lett. 57(2), 1990, pp. 162-164.