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Volumn , Issue , 2010, Pages 297-302

The advanced pattern designs with electrical test methodologies on through silicon via for CMOS image sensor

Author keywords

CMOS Image Sensor; Electrical Characterization; Through Silicon Via (TSV); Wafer Level Interconnection

Indexed keywords

3-D INTEGRATION; CMOS IMAGE SENSOR; ELECTRICAL CHARACTERIZATION; ELECTRICAL CONTINUITY; ELECTRICAL MEASUREMENT; ELECTRICAL TESTS; METAL LAYER; ON-WAFER; PATTERN DESIGNS; TEST PATTERN; THROUGH-SILICON-VIA; VIA RESISTANCE; WAFER LEVEL;

EID: 77955207780     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECTC.2010.5490958     Document Type: Conference Paper
Times cited : (13)

References (8)
  • 1
    • 61549122276 scopus 로고    scopus 로고
    • Through-Silicon Via (TSV)
    • January
    • Motoyoshi, M., "Through-Silicon Via (TSV), " Proceedings of the IEEE, Vol.97, No.1, pp. 43-48, January 2009.
    • (2009) Proceedings of the IEEE , vol.97 , Issue.1 , pp. 43-48
    • Motoyoshi, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.