A novel room-temperature wafer direct bonding method by fluorine containing plasma activation

Proceedings - Electronic Components and Technology Conference

Volumn , Issue , 2010, Pages 303-308

  Wang, Chenxi ^a   Suga, Tadatomo ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING ENERGIES; BONDING INTERFACES; BONDING STRENGTH; CARBON TETRAFLUORIDE; FRACTURE STRENGTHS; OXYGEN PLASMA TREATMENTS; PLASMA ACTIVATION; PLASMA-ACTIVATED BONDINGS; POLYMERIZATION REACTION; ROOM TEMPERATURE; SI SURFACES; WAFER DIRECT BONDING; WAFER SURFACE; WATER MOLECULE; WET CHEMICALS;

BONDING; CHEMICAL CLEANING; DIFFUSION BONDING; FLUORINE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; OXYGEN; PLASMA APPLICATIONS; PLASMAS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS; X RAY PHOTOELECTRON SPECTROSCOPY;

WAFER BONDING;

EID: 77955192987     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECTC.2010.5490955     Document Type: Conference Paper

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