Low-temperature bonding of silicon-oxide-covered wafers using diluted HF etching

Applied Physics Letters

Volumn 85, Issue 14, 2004, Pages 2762-2764

  Tong, Q Y ^a   Gan, Q ^a,b,c   Fountain, G ^a   Hudson, G ^a   Enquist, P ^a  

^a Ziptronix Inc   (United States)

^b RTI INTERNATIONAL   (United States)

^c Skyworks Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING ENERGY; COVALENT BONDS; DILUTED HF (DHF); SILICON OXIDES;

ACTIVATION ANALYSIS; ANNEALING; ATOMIC FORCE MICROSCOPY; CHEMICAL BONDS; ETCHING; INTERFACES (MATERIALS); QUARTZ; SECONDARY ION MASS SPECTROMETRY; SURFACE CLEANING; WATER ABSORPTION;

SILICON WAFERS;

EID: 8344276832     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1800275     Document Type: Article

References (9)

1. Q.-Y. Tong, G. Cha, R. Gafiteanu, and U. Goesele, J. Microelectromech. Syst. 3, 29 (1994).
2. H. Nakanishi, T. Nishimoto, R. Nakamura, A. Yotsumoto, and S. Shoji, in Proceedings of the 11th Annual International Workshop on Micro Electro Mechanical Systems, 1998, CH36176, p. 609.
3. T. Suni, K. Henttine, I. Suni, and J. Makinen, J. Electrochem. Soc. 149, 348 (2002).
4. M. Bruel, Electron. Lett. 31, 1201 (1995).
5. H. Nielson and D. Hackleman, J. Electrochem. Soc. 130, 708 (1983).
6. V. Pankov, J. C. Alonso, and A. Ortiz, J. Appl. Phys. 86, 275 (1999).
7. A. Kazor, C. Jeynes, and I. W. Boyd, Appl. Phys. Lett. 65, 1572 (1994).
8. Q.-Y. Tong and U. Goesele, J. Electrochem. Soc. 142, 3975 (1995).
9. J. Ziegler, J. Biersack, and U. Littmark, The Stopping and Range of Ions in Solid (Pergamon, New York, 1985).