메뉴 건너뛰기




Volumn 31, Issue 8, 2010, Pages 887-889

Performance degradation of pentacene-based organic thin-film transistors under positive drain bias stress in the atmosphere

Author keywords

Drain bias stress; organic thin film transistor (OTFT); pentacene; reliability; threshold voltage

Indexed keywords

CARRIER INJECTION; DRAIN BIAS; ELECTRICAL FIELD; GATE INSULATOR; ORGANIC THIN FILM TRANSISTORS; PENTACENES; PERFORMANCE DEGRADATION; RELIABILITY THRESHOLD; TRAP STATE DENSITY; VERTICAL ELECTRICAL FIELDS;

EID: 77955175554     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2051212     Document Type: Article
Times cited : (23)

References (21)
  • 1
    • 79956051443 scopus 로고    scopus 로고
    • Effects of film morphology and gate dielectric surface preparation on the electrical characteristics of organic-vapor-phase-deposited pentacene thin-film transistors
    • Jul.
    • M. Shtein, J. Mapel, J. B. Benziger, and S. R. Forrest, "Effects of film morphology and gate dielectric surface preparation on the electrical characteristics of organic-vapor-phase-deposited pentacene thin-film transistors," Appl. Phys. Lett., vol.81, no.2, pp. 268-270, Jul. 2002.
    • (2002) Appl. Phys. Lett. , vol.81 , Issue.2 , pp. 268-270
    • Shtein, M.1    Mapel, J.2    Benziger, J.B.3    Forrest, S.R.4
  • 2
    • 0037245896 scopus 로고    scopus 로고
    • Pentacene thin film transistors on inorganic dielectrics: Morphology, structural properties, and electronic transport
    • Jan.
    • D. Knipp, R. A. Street, A. Völkel, and J. Ho, "Pentacene thin film transistors on inorganic dielectrics: Morphology, structural properties, and electronic transport," J. Appl. Phys., vol.93, no.1, pp. 347-355, Jan. 2003.
    • (2003) J. Appl. Phys. , vol.93 , Issue.1 , pp. 347-355
    • Knipp, D.1    Street, R.A.2    Völkel, A.3    Ho, J.4
  • 3
    • 0028539601 scopus 로고
    • Dielectric properties of calixarene thin films in a large frequency range
    • Nov.
    • R. Ben Chaâbane, M. Gamoudi, and G. Guillaud, "Dielectric properties of calixarene thin films in a large frequency range," Synth. Met., vol.67, no.1-3, pp. 231-233, Nov. 1994.
    • (1994) Synth. Met. , vol.67 , Issue.1-3 , pp. 231-233
    • Ben Chaâbane, R.1    Gamoudi, M.2    Guillaud, G.3
  • 4
    • 0032275078 scopus 로고    scopus 로고
    • Metallophthalocyanines: Gas sensors, resistors and field effect transistors
    • Dec.
    • G. Guillaud, J. Simon, and J. P. Germain, "Metallophthalocyanines: Gas sensors, resistors and field effect transistors," Coord. Chem. Rev., vol.178-180, pp. 1433-1484, Dec. 1998.
    • (1998) Coord. Chem. Rev. , vol.178-180 , pp. 1433-1484
    • Guillaud, G.1    Simon, J.2    Germain, J.P.3
  • 5
    • 9444248760 scopus 로고    scopus 로고
    • Electrical characterization of pentacene thin-film transistors with polymeric gate dielectric
    • Nov.
    • J. Puigdollers, C. Voz, I. Martín, M. Vetter, A. Orpella, and R. Alcubilla, "Electrical characterization of pentacene thin-film transistors with polymeric gate dielectric," Synth. Met., vol.146, no.3, pp. 355-358, Nov. 2004.
    • (2004) Synth. Met. , vol.146 , Issue.3 , pp. 355-358
    • Puigdollers, J.1    Voz, C.2    Martín, I.3    Vetter, M.4    Orpella, A.5    Alcubilla, R.6
  • 6
    • 20844444594 scopus 로고    scopus 로고
    • Operational and environmental stability of pentacene thin-film transistors
    • May
    • C. R. Kagan, A. Afzali, and T. O. Graham, "Operational and environmental stability of pentacene thin-film transistors," Appl. Phys. Lett., vol.86, no.19, p. 193 505, May 2005.
    • (2005) Appl. Phys. Lett. , vol.86 , Issue.19 , pp. 193505
    • Kagan, C.R.1    Afzali, A.2    Graham, T.O.3
  • 7
    • 0042782752 scopus 로고    scopus 로고
    • 2O effect on the stability of organic thin-film field-effect transistors
    • Aug.
    • 2O effect on the stability of organic thin-film field-effect transistors," Appl. Phys. Lett., vol.83, no.8, pp. 1644-1646, Aug. 2003.
    • (2003) Appl. Phys. Lett. , vol.83 , Issue.8 , pp. 1644-1646
    • Qiu, Y.1    Hu, Y.2    Dong, G.3    Wang, L.4    Xie, J.5    Ma, Y.6
  • 8
    • 0037049559 scopus 로고    scopus 로고
    • Humidity sensors based on pentacene thin-film transistors
    • Dec.
    • Z. T. Zhu, J. T. Mason, R. Dieckmann, and G. G. Malliaras, "Humidity sensors based on pentacene thin-film transistors," Appl. Phys. Lett., vol.81, no.24, pp. 4643-4645, Dec. 2002.
    • (2002) Appl. Phys. Lett. , vol.81 , Issue.24 , pp. 4643-4645
    • Zhu, Z.T.1    Mason, J.T.2    Dieckmann, R.3    Malliaras, G.G.4
  • 10
    • 0011758918 scopus 로고    scopus 로고
    • Reversible gas doping of bulk α-hexathiophene
    • Sep.
    • J. H. Schön, C. Kloc, and B. Batlogg, "Reversible gas doping of bulk α-hexathiophene," Appl. Phys. Lett., vol.75, no.11, pp. 1556-1558, Sep. 1999.
    • (1999) Appl. Phys. Lett. , vol.75 , Issue.11 , pp. 1556-1558
    • Schön, J.H.1    Kloc, C.2    Batlogg, B.3
  • 11
    • 0041339891 scopus 로고    scopus 로고
    • Light-induced bias stress reversal in polyflu-orene thin-film transistors
    • Jul.
    • A. Salleo and R. A. Street, "Light-induced bias stress reversal in polyflu-orene thin-film transistors," J. Appl. Phys., vol.94, no.1, pp. 471-479, Jul. 2003.
    • (2003) J. Appl. Phys. , vol.94 , Issue.1 , pp. 471-479
    • Salleo, A.1    Street, R.A.2
  • 12
    • 0141676353 scopus 로고    scopus 로고
    • Bipolaron mechanism for bias-stress effects in polymer transistors
    • Aug.
    • R. A. Street, A. Salleo, and M. L. Chabinyc, "Bipolaron mechanism for bias-stress effects in polymer transistors," Phys. Rev. B, Condens. Matter, vol.68, no.8, p. 085 316, Aug. 2003.
    • (2003) Phys. Rev. B, Condens. Matter , vol.68 , Issue.8 , pp. 085316
    • Street, R.A.1    Salleo, A.2    Chabinyc, M.L.3
  • 13
    • 17044383801 scopus 로고    scopus 로고
    • Influence of the gate leakage current on the stability of organic single-crystal field-effect transistors
    • Jan.
    • R. W. I. de Boer, N. N. Iosad, A. F. Stassen, T. M. Klapwijk, and A. F. Morpurgo, "Influence of the gate leakage current on the stability of organic single-crystal field-effect transistors," Appl. Phys. Lett., vol.86, no.3, p. 032 103, Jan. 2005.
    • (2005) Appl. Phys. Lett. , vol.86 , Issue.3 , pp. 032103
    • De Boer, R.W.I.1    Iosad, N.N.2    Stassen, A.F.3    Klapwijk, T.M.4    Morpurgo, A.F.5
  • 14
    • 77955177035 scopus 로고    scopus 로고
    • Instability of threshold voltage under DC drain bias stress in pentacene-based organic thin film transistors
    • C. L. Fan, T. H. Yang, C. C. Lin, and C. Y. Chiang, "Instability of threshold voltage under DC drain bias stress in pentacene-based organic thin film transistors," in Proc. Int. Conf. Solid State Device Mater., 2008, p. 638.
    • (2008) Proc. Int. Conf. Solid State Device Mater. , pp. 638
    • Fan, C.L.1    Yang, T.H.2    Lin, C.C.3    Chiang, C.Y.4
  • 15
    • 33847421302 scopus 로고    scopus 로고
    • A novel LTPS-TFT pixel circuit compensating for TFT threshold-voltage shift and OLED degradation for AMOLED
    • Feb.
    • C. L. Lin and Y. C. Chen, "A novel LTPS-TFT pixel circuit compensating for TFT threshold-voltage shift and OLED degradation for AMOLED," IEEE Electron Device Lett., vol.28, no.2, pp. 129-131, Feb. 2007.
    • (2007) IEEE Electron Device Lett. , vol.28 , Issue.2 , pp. 129-131
    • Lin, C.L.1    Chen, Y.C.2
  • 16
    • 36348989129 scopus 로고    scopus 로고
    • A new pixel circuit compensating for brightness variation in large size high resolution AMOLED displays
    • Dec.
    • H. Y. Lu, T. C. Chang, Y. H. Tai, P. T. Liu, and S. Chi, "A new pixel circuit compensating for brightness variation in large size high resolution AMOLED displays," J. Display Technol., vol.3, no.4, pp. 398-403, Dec. 2007.
    • (2007) J. Display Technol. , vol.3 , Issue.4 , pp. 398-403
    • Lu, H.Y.1    Chang, T.C.2    Tai, Y.H.3    Liu, P.T.4    Chi, S.5
  • 18
    • 0020089602 scopus 로고
    • Conductivity behavior in polycrystalline semiconductor thin film transistors
    • Feb.
    • J. Levinson, F. R. Shepherd, P. J. Scanlon, W. D. Westwood, G. Este, and M. Rider, "Conductivity behavior in polycrystalline semiconductor thin film transistors," J. Appl. Phys., vol.53, no.2, pp. 1193-1202, Feb. 1982.
    • (1982) J. Appl. Phys. , vol.53 , Issue.2 , pp. 1193-1202
    • Levinson, J.1    Shepherd, F.R.2    Scanlon, P.J.3    Westwood, W.D.4    Este, G.5    Rider, M.6
  • 19
    • 24144485910 scopus 로고    scopus 로고
    • Improved performance of pentacene field-effect transistors using a polyimide gate dielectric layer
    • Apr.
    • K. N. N. Unni, D. S. Sylvie, and J. M. Nunzi, "Improved performance of pentacene field-effect transistors using a polyimide gate dielectric layer," J. Phys. D, Appl. Phys., vol.38, no.8, pp. 1148-1151, Apr. 2005.
    • (2005) J. Phys. D, Appl. Phys. , vol.38 , Issue.8 , pp. 1148-1151
    • Unni, K.N.N.1    Sylvie, D.S.2    Nunzi, J.M.3
  • 21
    • 1942488244 scopus 로고    scopus 로고
    • Drain-bias dependence of threshold voltage stability of amorphous silicon TFTs
    • Apr.
    • K. S. Karim, A. Nathan, M. Hack, and W. I. Milne, "Drain-bias dependence of threshold voltage stability of amorphous silicon TFTs," IEEE Electron Device Lett., vol.25, no.4, pp. 188-190, Apr. 2004.
    • (2004) IEEE Electron Device Lett. , vol.25 , Issue.4 , pp. 188-190
    • Karim, K.S.1    Nathan, A.2    Hack, M.3    Milne, W.I.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.