Effect of buffer thickness on single-walled carbon nanotube growth using aluminum oxide buffer layer with alcohol gas Source method

Journal of Nanoscience and Nanotechnology

Volumn 10, Issue 6, 2010, Pages 3929-3933

  Sato, Kuniori ^a   Shiraiwa, Tomoyuki ^a   Maruyama, Takahiro ^a   Naritsuka, Shigeya ^a  

^a MEIJO UNIVERSITY   (Japan)

Author keywords

Al 2O x; Buffer layer; Carbon nanotube; CVD; Gas source method

Indexed keywords

AL 2O X; ALUMINUM OXIDES; BUFFER LAYER THICKNESS; CO CATALYSTS; CO PARTICLES; GAS SOURCES; NANO-SIZED; OXIDE LAYER; OXIDE THICKNESS; SI SUBSTRATES; SINGLE-WALLED CARBON; SINGLE-WALLED NANOTUBE; SURFACE FLATNESS; SWNT GROWTH; TEM; VERTICALLY ALIGNED;

BUFFER LAYERS; CARBON NANOTUBES; EPITAXIAL LAYERS; ETHANOL; OPTICAL WAVEGUIDES; OPTIMIZATION; ORGANIC POLYMERS; OXIDES; SCANNING ELECTRON MICROSCOPY; SINGLE-WALLED CARBON NANOTUBES (SWCN); TRANSMISSION ELECTRON MICROSCOPY;

ALUMINUM;

EID: 77954960629     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2010.1987     Document Type: Article

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