All-silicon and in-line integration of variable optical attenuators and photodetectors based on submicrometer rib waveguides

Optics Express

Volumn 18, Issue 15, 2010, Pages 15303-15310

  Park, Sungbong ^a   Yamada, Koji ^a   Tsuchizawa, Tai ^a   Watanabe, Toshifumi ^a   Nishi, Hidetaka ^a   Shinojima, Hiroyuki ^a   Itabashi, Sei Ichi ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; DC POWER TRANSMISSION; ELECTRIC ATTENUATORS; INFRARED DEVICES; ION IMPLANTATION; MONOLITHIC INTEGRATED CIRCUITS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; WAVEGUIDES;

ABSORPTION COEFFICIENTS; ARGON ION IMPLANTATION; DETECTION RANGE; DRIVE CURRENTS; IN-LINE; LATTICE DEFECTS; MONOLITHIC INTEGRATION; NEAR INFRARED LIGHT; OPTICAL POWER; PERFORMANCE DEGRADATION; PIN DIODE; REVERSE BIAS; RF NOISE; RIB WAVEGUIDES; SUBMICROMETERS; SYNCHRONOUS OPERATIONS; VARIABLE OPTICAL ATTENUATORS;

ELECTROMAGNETIC WAVE ATTENUATION;

EID: 77954911235     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.18.015303     Document Type: Article

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