Monolithic integration of germanium photodetectors and silicon wire waveguides with carrier injection structures

2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009

Volumn , Issue , 2009, Pages

  Tsuchizawa, Tai ^a   Yamada, Koji ^a   Watanabe, Toshifumi ^a   Shinojima, Hiroyuki ^a   Nishi, Hidetaka ^a   Itabashi, Seiichi ^a   Park, Sungbong ^b   Ishikawa, Yasuhiko ^b   Wada, Kazumi ^b  

^a NTT CORPORATION   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER INJECTION; LIGHT POWER; MONOLITHIC INTEGRATION; RESPONSIVITY; RIB WAVEGUIDES; SILICON WIRE WAVEGUIDES; VARIABLE OPTICAL ATTENUATORS;

ELECTROMAGNETIC WAVE ATTENUATION; ELECTRON OPTICS; GERMANIUM; LIGHT; MONOLITHIC INTEGRATED CIRCUITS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; QUANTUM ELECTRONICS; WAVEGUIDE ATTENUATORS; WAVEGUIDES; WIRE;

LASERS;

EID: 71049188404     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. T. Tsuchizawa et al., "Microphotonics devices based on silicon microfabrication technology," IEEE J. Sel. Top. QE. 11, 232 (2005).
2. W. Bogaerts et al., "Compact wavelength-selective functions in silicon-on-insulator photonic wires", IEEE J. Sel. Top. QE. 12, 1394 (2006).
3. S. J. Spector et al., "Low-power, high-speed Mach-Zehnder modulator in silicon", Proc. IEEE Intern. Conf. Group IV Photonics, Ottawa, 2006, pp. 164.
4. K. Yamada et al., "Applications of low-loss silicon photonic wire waveguides with carrier injection structures", Proc. IEEE Intern. Conf. Group IV Photonics, Tokyo, 2007, pp. 116.
5. L. Vivien et al.,"High speed and high responsivity germanium photodetector integrated in a silicon-on-insulator microwaveguide, Opt. Express 15, 9843 (2007).
6. T. Yin et al., "31GHz Ge n-i-p waveguide photodetectors on silicon-on-insulator substrate", Opt. express 15, 13965 (2007).
7. S. Park et al., "Effect of post-growth annealing on morphology of Ge mesa selectively grown on Si", IEICE Trans. Elect., E91-C, 181 (2007).