Nonlocal activation of a bistable atom through a surface state charge-transfer process on Si(100)-(2×1):H

Physical Review Letters

Volumn 105, Issue 4, 2010, Pages

  Bellec, A ^a   Riedel, D ^a   Dujardin, G ^a   Boudrioua, O ^b   Chaput, L ^b   Stauffer, L ^b   Sonnet, Ph ^b  

^a INSTITUT DES SCIENCES MOLÉCULAIRES D ORSAY   (France)

^b UNIVERSITÉ DE HAUTE ALSACE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BISTABLES; CONTACT REGIONS; DENSITY OF STATE; HOLE INJECTION; LOW TEMPERATURES; NONLOCAL; SCANNING TUNNELING MICROSCOPES; SHORT DISTANCES; SI(1 0 0); SI-SI BONDS; SILICON BONDS; SURFACE STATE;

ELECTRON INJECTION; HOLE TRAPS; SILICON;

ATOMS;

EID: 77954859667     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.105.048302     Document Type: Article

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