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Volumn 80, Issue 24, 2009, Pages

Effect of as preadsorption on InAs nanowire heteroepitaxy on Si(111): A first-principles study

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EID: 77954746908     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.80.245302     Document Type: Article
Times cited : (8)

References (39)
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    • As argued in Sec. , the energetics of the Si(111)-As surface is mostly governed by As-Si bond orientation. Given the large variations in this orientation, covalent contributions are likely to outweigh vibrational and entropy ones. A similar argument holds for the In-adatom structures examined here, which differ in interlayer covalent interactions (Sec. ).
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    • For the faulted and unfaulted models, T4 is found to be 0.05 and 0.03 eV per reconstruction cell, respectively, lower in energy than H3.
    • For the faulted and unfaulted models, T 4 is found to be 0.05 and 0.03 eV per reconstruction cell, respectively, lower in energy than H 3.


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