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1
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0000503657
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J.M. Nicholls, B. Reihl and J.E. Northrup, Phys. Rev. B 35 (1987) 4137; A. Kawazu and H. Sakama, Phys. Rev. B 37 (1988) 2704; J. Zegenhagen, J.R, Patel, P. Freeland, D.M. Chen, J.A. Golovchenko, P. Bedrossian and J.E. Northrup, Phys. Rev. B 39 (1989) 1298.
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(1987)
Phys. Rev. B
, vol.35
, pp. 4137
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Nicholls, J.M.1
Reihl, B.2
Northrup, J.E.3
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2
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0001654236
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J.M. Nicholls, B. Reihl and J.E. Northrup, Phys. Rev. B 35 (1987) 4137; A. Kawazu and H. Sakama, Phys. Rev. B 37 (1988) 2704; J. Zegenhagen, J.R, Patel, P. Freeland, D.M. Chen, J.A. Golovchenko, P. Bedrossian and J.E. Northrup, Phys. Rev. B 39 (1989) 1298.
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(1988)
Phys. Rev. B
, vol.37
, pp. 2704
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Kawazu, A.1
Sakama, H.2
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3
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35949014710
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J.M. Nicholls, B. Reihl and J.E. Northrup, Phys. Rev. B 35 (1987) 4137; A. Kawazu and H. Sakama, Phys. Rev. B 37 (1988) 2704; J. Zegenhagen, J.R, Patel, P. Freeland, D.M. Chen, J.A. Golovchenko, P. Bedrossian and J.E. Northrup, Phys. Rev. B 39 (1989) 1298.
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(1989)
Phys. Rev. B
, vol.39
, pp. 1298
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Zegenhagen, J.1
Patel, J.R.2
Freeland, P.3
Chen, D.M.4
Golovchenko, J.A.5
Bedrossian, P.6
Northrup, J.E.7
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9
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0042867923
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A. Kawazu, Y. Saito, N. Ogiwara, T. Otsuki and G. Tominaga, Surf. Sci. 86 (1979) 108.
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(1979)
Surf. Sci.
, vol.86
, pp. 108
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Kawazu, A.1
Saito, Y.2
Ogiwara, N.3
Otsuki, T.4
Tominaga, G.5
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11
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0006234521
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There are experimental observations of the (√3 × √3)R30° adatom structure of Bi adatoms on the Si(111) surface, with 1 ML coverage of Bi. This (√3 × √3)R30° structure is different from the T4 structure we consider in this paper. See: K.J. Wan, T. Guo, W.K. Ford and J.C. Hermanson, Phys. Rev. B 44 (1991) 3471; R. Shioda, A. Kawazu, A.A. Baski, C.F. Quate, and J. Nogami, Phys. Rev. B 48 (1993) 4895.
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(1991)
Phys. Rev. B
, vol.44
, pp. 3471
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Wan, K.J.1
Guo, T.2
Ford, W.K.3
Hermanson, J.C.4
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12
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0001243289
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There are experimental observations of the (√3 × √3)R30° adatom structure of Bi adatoms on the Si(111) surface, with 1 ML coverage of Bi. This (√3 × √3)R30° structure is different from the T4 structure we consider in this paper. See: K.J. Wan, T. Guo, W.K. Ford and J.C. Hermanson, Phys. Rev. B 44 (1991) 3471; R. Shioda, A. Kawazu, A.A. Baski, C.F. Quate, and J. Nogami, Phys. Rev. B 48 (1993) 4895.
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(1993)
Phys. Rev. B
, vol.48
, pp. 4895
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Shioda, R.1
Kawazu, A.2
Baski, A.A.3
Quate, C.F.4
Nogami, J.5
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21
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0002862146
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The definition of the adsorption energy using the energy of the isolated adatoms is only one possible choice of many. For example, in the paper by Biegelsen et al. (D.K. Biegelsen, R.D. Bringans, J.E. Northrup, M.C. Schabel and L.-E. Swartz, Phys. Rev. B 47 (1993) 9589). They use the energy of bulk As instead to study As termination of the Si(110) surface, and discuss the variation of the surface energy with respect to different As chemical potentials, i.e. different possible choices.
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(1993)
Phys. Rev. B
, vol.47
, pp. 9589
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Biegelsen, D.K.1
Bringans, R.D.2
Northrup, J.E.3
Schabel, M.C.4
Swartz, L.-E.5
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23
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0042867920
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Note that all energies in the present work are given with respect to ideal (1×1) surface
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Note that all energies in the present work are given with respect to ideal (1×1) surface.
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24
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0042867922
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For estimating the surface energy of the clean reconstructed surface, we use the same assumption as in Ref. [10], viz. that it can be approximated by the results obtained on the 2×2 surface cells. From Table II in Ref. [19], the best 8 Ry results for Ge and 12 Ry for Si, one gets -0.20 eV per (1 × 1) cell of Ge (= 1.20-1.40), and -0.27eV per (1 × 1) cell of Si (=1.12-1.39). (Note that all energies in the present work are given with respect to ideal (1×1) surface.) The phase-separation energy evaluated for As on Si(111) in Ref. [10] was based on the less precise value of surface energy -0.21 eV per (1×1) cell of Si which was obtained with the 8 Ry cut-off
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For estimating the surface energy of the clean reconstructed surface, we use the same assumption as in Ref. [10], viz. that it can be approximated by the results obtained on the 2×2 surface cells. From Table II in Ref. [19], the best 8 Ry results for Ge and 12 Ry for Si, one gets -0.20 eV per (1 × 1) cell of Ge (= 1.20-1.40), and -0.27eV per (1 × 1) cell of Si (=1.12-1.39). (Note that all energies in the present work are given with respect to ideal (1×1) surface.) The phase-separation energy evaluated for As on Si(111) in Ref. [10] was based on the less precise value of surface energy -0.21 eV per (1×1) cell of Si which was obtained with the 8 Ry cut-off.
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