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Physical Review B - Condensed Matter and Materials Physics

Volumn 80, Issue 24, 2009, Pages

Temperature dependence of the crossover between the near-infrared Er and defect-related photoluminescence bands of Ge-rich Er-doped SiO2 layers

(6) Kanjilal, A a Rebohle, L a Prucnal, S a Voelskow, M a Skorupa, W a Helm, M a

a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77954731233 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.80.241313 Document Type: Article

Times cited : (5)

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