Single carrier devices with electrical doped layers for the characterization of charge-carrier transport in organic thin-films

Applied Physics Letters

Volumn 97, Issue 1, 2010, Pages

  Schober, Matthias ^a   Olthof, Selina ^a   Furno, Mauro ^a   Lüssem, Björn ^a   Leo, Karl ^a  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BUILT-IN VOLTAGE; CHARGE-CARRIER TRANSPORT; CRUCIAL PARAMETERS; DOPED LAYERS; INTERFACE DIPOLE; METAL CONTACTS; MULTI-LAYER DEVICES; ORGANIC LAYERS; ORGANIC SEMICONDUCTOR; SIMULATION MODEL; SINGLE CARRIER; TEST DEVICE;

CARRIER TRANSPORT; COMPUTER SIMULATION; OHMIC CONTACTS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 77954699458     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3460528     Document Type: Article

References (20)

1. J. Staudigel, M. Stöβel, F. Steuber, and J. Simmerer, J. Appl. Phys. JAPIAU 0021-8979 86, 3895 (1999). 10.1063/1.371306
2. B. Ruhstaller, S. A. Carter, S. Barth, H. Riel, W. Riess, and J. C. Scott, J. Appl. Phys. JAPIAU 0021-8979 89, 4575 (2001). 10.1063/1.1352027
3. D. Berner, H. Houili, W. Leo, and L. Zuppiroli, Phys. Status Solidi A PSSABA 0031-8965 202, 9 (2005). 10.1002/pssa.200406905
4. C. -C. Lee, M. -Y. Chang, P. -T. Huang, Y. C. Chen, Y. Chang, and S. -W. Liu, J. Appl. Phys. JAPIAU 0021-8979 101, 114501 (2007). 10.1063/1.2738445
5. W. F. Pasveer, J. Cottaar, C. Tanase, R. Coehoorn, P. A. Bobbert, P. W. M. Blom, D. M. de Leeuw, and M. A. J. Michels, Phys. Rev. Lett. PRLTAO 0031-9007 94, 206601 (2005). 10.1103/PhysRevLett.94.206601
6. S. L. M. van Mensfoort, S. I. E. Vulto, R. A. J. Janssen, and R. Coehoorn, Phys. Rev. B PRBMDO 0163-1829 78, 085208 (2008). 10.1103/PhysRevB.78. 085208
7. M. Bouhassoune, S. L. M. van Mensfoort, P. A. Bobbert, and R. Coehoorn, Org. Electron. OERLAU 1566-1199 10, 437 (2009). 10.1016/j.orgel.2009.01.005
8. R. Coehoorn and S. L. M. van Mensfoort, Phys. Rev. B PRBMDO 0163-1829 80, 085302 (2009). 10.1103/PhysRevB.80.085302
9. I. N. Hulea, H. B. Brom, A. J. Houtepen, D. Vanmaekelbergh, J. J. Kelly, and E. A. Meulenkamp, Phys. Rev. Lett. PRLTAO 0031-9007 93, 166601 (2004). 10.1103/PhysRevLett.93.166601
10. O. Tal, Y. Rosenwaks, Y. Preezant, N. Tessler, C. K. Chan, and A. Kahn, Phys. Rev. Lett. PRLTAO 0031-9007 95, 256405 (2005). 10.1103/PhysRevLett.95. 256405
11. S. Braun, W. Osikowicz, Y. Wang, and W. R. Salaneck, Org. Electron. OERLAU 1566-1199 8, 14 (2007). 10.1016/j.orgel.2006.10.006
12. A. Kahn, N. Koch, and W. Gao, J. Polym. Sci., Part B: Polym. Phys. JPBPEM 0887-6266 41, 2529 (2003). 10.1002/polb.10642
13. G. He, M. Pfeiffer, K. Leo, M. Hofmann, J. Birnstock, R. Pudzich, and J. Salbeck, Appl. Phys. Lett. APPLAB 0003-6951 85, 3911 (2004). 10.1063/1.1812378
14. M. Thomschke, R. Nitsche, M. Furno, and K. Leo, Appl. Phys. Lett. APPLAB 0003-6951 94, 083303 (2009). 10.1063/1.3088854
15. S. Olthof, R. Meerheim, M. Schober, and K. Leo, Phys. Rev. B PRBMDO 0163-1829 79, 245308 (2009). 10.1103/PhysRevB.79.245308
16. K. Walzer, B. Maennig, M. Pfeiffer, and K. Leo, Chem. Rev. (Washington, D.C.) CHREAY 0009-2665 107, 1233 (2007). 10.1021/cr050156n
17. R. J. de Vries, S. L. M. van Mensfoort, V. Shabro, S. I. E. Vulto, R. A. J. Janssen, and R. Coehoorn, Appl. Phys. Lett. APPLAB 0003-6951 94, 163307 (2009). 10.1063/1.3119317
18. M. S. Liu, Y. -H. Niu, J. -W. Ka, H. -L. Yip, F. Huang, J. Luo, T. -D. Kim, and A. K.-Y. Jen, Macromolecules MAMOBX 0024-9297 41, 9570 (2008). 10.1021/ma801374w
19. S. H. Kim, J. Jang, and J. Y. Lee, J. Lumin. JLUMA8 0022-2313 128, 2035 (2008). 10.1016/j.jlumin.2008.07.002
20. B. W. D'Andrade, S. Datta, S. R. Forrest, P. Djurovich, E. Polikarpov, and M. E. Thompson, Org. Electron. OERLAU 1566-1199 6, 11 (2005). 10.1016/j.orgel.2005.01.002