Electrical and optical simulation of organic light-emitting devices with fluorescent dopant in the emitting layer

Journal of Applied Physics

Volumn 101, Issue 11, 2007, Pages

  Lee, Chih Chien ^a   Chang, Mei Ying ^b   Huang, Ping Tsung ^c   Chen, Yen Chun ^c   Chang, Yih ^c   Liu, Shun Wei ^d  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c RiTdisplay Corporation   (Taiwan)

^d INSTITUTE OF CHEMISTRY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER TRANSPORT; COMPUTER SIMULATION; ELECTRIC PROPERTIES; EXCITONS; MATHEMATICAL MODELS; OPTICAL PROPERTIES;

EXCITON MODEL; OPTICAL SIMULATION; ORGANIC LIGHT-EMITTING DEVICES;

LIGHT EMITTING DIODES;

EID: 34250642793     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2738445     Document Type: Article

References (44)

1. C. W. Tang and S. A. Van Slyke, Appl. Phys. Lett. 51, 913 (1987).
2. C. W. Tang, S. A. Van Slyke, and C. H. Chen, J. Appl. Phys. 65, 3610 (1989).
3. C. Hosokawa, H. Higashi, H. Nakamura, and T. Kusumoto, Appl. Phys. Lett. 67, 3853 (1995).
4. J. Shi and C. W. Tang, Appl. Phys. Lett. 70, 1665 (1997).
5. P. W. M. Blom, M. J. M. de Jong, and J. J. M. Vleggaar, Appl. Phys. Lett. 68, 3308 (1996).
6. P. S. Davids, I. H. Campbell, and D. L. Smith, J. Appl. Phys. 82, 6319 (1997).
7. B. K. Crone, P. S. Davids, I. H. Campbell, and D. L. Smith, J. Appl. Phys. 84, 833 (1998).
8. Y. Kawabe, M. M. Morrell, G. E. Jabbour, S. E. Shaheen, B. Kippelen, and N. Peyghambarian, J. Appl. Phys. 84, 5306 (1998).
9. G. G. Malliaras and J. C. Scott, J. Appl. Phys. 85, 7426 (1999).
10. J. Staudigel, M. Stossel, F. Steuber, and J. Simmerer, J. Appl. Phys. 86, 3895 (1999).
11. B. K. Crone, P. S. Davids, I. H. Campbell, and D. L. Smith, J. Appl. Phys. 87, 1974 (2000).
12. N. Tessler, D. J. Pinner, and R. H. Friend, Synth. Met. 111-112, 269 (2000).
13. C. D. J. Blades and A. B. Walker, Synth. Met. 111-112, 335 (2000).
14. G. Paasch and S. Scheinert, Synth. Met. 122, 145 (2001).
15. E. Tutiš, M. N. Bussac, B. Masenelli, M. Carrard, and L. Zuppiroli, J. Appl. Phys. 89, 430 (2001).
16. B. Ruhstaller, S. A. Carter, S. Barth, H. Riel, W. Riess, and J. C. Scott, J. Appl. Phys. 89, 4575 (2001).
17. A. Nesterov, G. Paasch, S. Scheinert, and T. Lindner, Synth. Met. 130, 165 (2002).
18. G. Paasch, A. Nesterov, and S. Scheinert, Synth. Met. 139, 425 (2003).
19. B. Ruhstaller, T. Beierlein, H. Riel, S. Karg, J. C. Scott, and W. Riess, IEEE J. Sel. Top. Quantum Electron. 9, 723 (2003).
20. S. J. Konezny, D. L. Smith, M. E. Galvin, and L. J. Rothberg, J. Appl. Phys. 99, 064509 (2006).
21. J. Yang and J. Shen, J. Appl. Phys. 84, 2105 (1998).
22. F. Nüesch, D. Berner, E. Tutiš, M. Schaer, C. Ma, X. Wang, B. Zhang, and L. Zuppiroli, Adv. Funct. Mater. 15, 323 (2005).
23. C. C. Lee, M. Y. Chang, Y. D. Jong, T. W. Huang, C. S. Chu, and Y. Chang, Jpn. J. Appl. Phys., Part 1 43, 7560 (2004).
24. V. Bulovic, A. Shoustikov, M. A. Baldo, E. Bose, V. G. Kozlov, M. E. Thompson, and S. R. Forrest, Chem. Phys. Lett. 287, 455 (1998).
25. H. Suzuki and S. Hoshino, J. Appl. Phys. 79, 8816 (1996).
26. H. Murata, C. D. Merritt, and Z. H. Kafafi, IEEE J. Sel. Top. Quantum Electron. 4, 119 (1998).
27. S. E. Shaheen, J. Appl. Phys. 85, 7939 (1999).
28. T. Förster, Discuss. Faraday Soc. 27, 7 (1959).
29. C. C. Lee, Y. D. Jong, P. T. Huang, Y. C. Chen, P. J. Hu, and Y. Chang, Jpn. J. Appl. Phys., Part 1 44, 8147 (2005).
30. M. Pope and C. E. Swenberg, Electronic Processes in Organic Crystals (Oxford University Press, New York, 1982).
31. J. R. Reitz, F. J. Milford, and R. W. Christy, Foundations of Electromagnetic Theory (Addison-Wesley, Reading, MA, 1979).
32. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
33. R. H. Fowler and L. Nordheim, Proc. R. Soc. London, Ser. A 119, 173 (1928).
34. J. C. Scott and G. G. Malliaras, Chem. Phys. Lett. 299, 115 (1999).
35. V. G. Kozlov, J. Appl. Phys. 84, 4096 (1998).
36. O. Stern and M. Volmer, Phys. Z. 20, 183 (1919).
37. M. Stoessel, J. Appl. Phys. 87, 4467 (2000).
38. N. C. Greenham, R. H. Friend, and D. C. Bradley, Adv. Mater. (Weinheim, Ger.) 6, 491 (1994).
39. D. L. Scharfetter and H. K. Gummel, IEEE Trans. Electron Devices 16, 64 (1969).
40. D. Z. Garbuzov, V. Bulovic, and S. R. Forrest, Chem. Phys. Lett. 249, 433 (1996).
41. K. Read, H. S. Karlsson, M. M. Murnane, H. C. Kapteyn, and R. Haight, J. Appl. Phys. 90, 294 (2001).
42. H. Mattoussi, H. Murata, C. D. Merritt, Y. Iizumi, J. Kido, and Z. H. Kafafi, J. Appl. Phys. 86, 2642 (1999).
43. I. Sokolik, R. Priestley, A. D. Walser, R. Dorsinville, and C. W. Tang, Appl. Phys. Lett. 69, 4168 (1996).
44. L. S. Hung and C. H. Chen, Mater. Sci. Eng., R. 39, 143 (2002).