Influence of substrate temperature on N-doped ZnO films deposited by RF magnetron sputtering

Thin Solid Films

Volumn 515, Issue 24 SPEC. ISS., 2007, Pages 8785-8788

  Wang, Jinzhong ^a   Sallet, Vincent ^b   Jomard, François ^b   Botelho do Rego, Ana M ^c   Elamurugu, Elangovan ^a   Martins, Rodrigo ^a   Fortunato, Elvira ^a  

^a Center of Excellence in Microelectronics Optoelectronics and Processes   (Portugal)

^b Centre National de la Recherche Scientifique   (France)

^c INSTITUTO SUPERIOR TÉCNICO   (Portugal)

Author keywords

Hall measurement; SIMS; Sputtering; XPS; ZnO thin films

Indexed keywords

HALL EFFECT; MAGNETRON SPUTTERING; SECONDARY ION MASS SPECTROMETRY; THERMAL EFFECTS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

COMPOSITIONAL ANALYSES; HALL COEFFICIENTS; ROOM TEMPERATURE; SUBSTRATE TEMPERATURE;

THIN FILMS;

EID: 34548840549     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.03.061     Document Type: Article

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