Interface formation and electrical transport in SnO 2: Eu3+/GaAs heterojunction deposited by sol-gel dip-coating and resistive evaporation

Journal of Electronic Materials

Volumn 39, Issue 8, 2010, Pages 1170-1176

  Pineiz, Tatiane F ^a   Scalvi, Luis V A ^a   Saeki, Margarida J ^a   De Morais, Evandro A ^b  

^a SÃO PAULO STATE UNIVERSITY UNESP   (Brazil)

^b FEDERAL UNIVERSITY OF MINAS GERAIS   (Brazil)

Author keywords

Europium; Gallium arsenide; Heterojunction; Tin dioxide

Indexed keywords

CRYSTALLOGRAPHIC PLANE; ELECTRICAL TRANSPORT; GAAS; GAAS FILMS; HETEROJUNCTION DEVICES; HIGH-MOBILITY SEMICONDUCTORS; INTERFACE FORMATION; LOW RESISTIVITY; MATRIX; N-TYPE CONDUCTION; RARE-EARTH DOPING; SEM; SMALL CHANNELS; SOL GEL DIP COATING; TWO-DIMENSIONAL ELECTRON GAS (2DEG);

COATINGS; DOPING (ADDITIVES); ELECTRON GAS; EUROPIUM; GALLIUM ALLOYS; GALLIUM ARSENIDE; GELS; HOLOGRAPHIC INTERFEROMETRY; RESISTIVE EVAPORATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; SOL-GEL PROCESS; SOL-GELS; SOLS; TIN; TIN DIOXIDE; TITANIUM COMPOUNDS; TWO DIMENSIONAL ELECTRON GAS; X RAY DIFFRACTION;

HETEROJUNCTIONS;

EID: 77954620865     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-010-1161-0     Document Type: Article

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