Non-equilibrium charge carriers generation - recombination mechanisms at the interface of the SnO2/GaSe heterojunction

Thin Solid Films

Volumn 517, Issue 7, 2009, Pages 2515-2518

  Cuculescu, Elmira ^a   Evtodiev, Igor ^a   Caraman, Mihail ^b  

^a MOLDOVA STATE UNIVERSITY   (Moldova)

^b VASILE ALECSANDRI UNIVERSITY OF BACAU   (Romania)

Author keywords

GaSe; Heterojunction; Photocurrent; Photoluminescence; SnO2

Indexed keywords

GALLIUM COMPOUNDS; LAYERED SEMICONDUCTORS; PHOTOCURRENTS; PHOTOLUMINESCENCE; SELENIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

DEPOSITION METHODS; GASE; GENERATION RECOMBINATION; NON EQUILIBRIUM; SNO2; SPECTRAL DISTRIBUTION; SPECTRAL RANGE;

HETEROJUNCTIONS;

EID: 58949100301     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.11.066     Document Type: Article

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