N-ZnO/n-GaAs Heterostructured white light-emitting diode: Nanoscale interface analysis and electroluminescence studies

IEEE Transactions on Electron Devices

Volumn 57, Issue 1, 2010, Pages 129-133

  Tan, Swee Tiam ^a   Zhao, Junliang ^b   Iwan, S ^b   Sun, Xiao Wei ^b   Tang, Xiaohong ^b   Ye, Jiandong ^a   Bosman, M ^a   Tang, Leijun ^a   Lo, Guo Qiang ^a   Teo, K L ^c  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Heterostructures; Light emitting diode (LED); ZnO

Indexed keywords

DEEP LEVEL; GAAS; HETEROSTRUCTURES; INTERFACE ANALYSIS; INTERFACE LAYER; NANO SCALE; NEAR-INFRARED EMISSIONS; SCANNING TRANSMISSION ELECTRON MICROSCOPY; ULTRASONIC SPRAY PYROLYSIS TECHNIQUE; WHITE LIGHT EMITTING DIODES; ZNO; ZNO LAYERS;

CRYSTALS; DIODES; ELECTROLUMINESCENCE; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM ARSENIDE; HETEROJUNCTIONS; LIGHT; LIGHT EMISSION; NANOSTRUCTURED MATERIALS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; SPRAY PYROLYSIS; TRANSMISSION ELECTRON MICROSCOPY; ULTRASONIC TESTING; ZINC OXIDE;

LIGHT EMITTING DIODES;

EID: 73349092132     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2034497     Document Type: Article

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