Dependence of the electrical parameters of MBE-grown Cd x Hg1-x Te films on the level of doping with indium

Semiconductors

Volumn 42, Issue 6, 2008, Pages 648-650

  Varavin, V S ^a   Dvoretskii S A ^a   Ikusov, D G ^a   Mikhailov N N ^a   Sidorov, Yu G ^a   Sidorov, G Yu ^a   Yakushev, M V ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 45249104139     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063782608060031     Document Type: Article

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