Optical characteristics of hexagonal GaN self-assembled quantum dots: Strong influence of built-in electric field and carrier localization

Applied Physics Letters

Volumn 81, Issue 26, 2002, Pages 4934-4936

  Cho, Yong Hoon ^a   Kwon, B J ^a   Barjon, J ^b,c   Brault, J ^b,c   Daudin, B ^b,c   Mariette, H ^b,c   Dang, Le Si ^b,c  

^a Chungbuk National University   (South Korea)

^b CEA GRENOBLE   (France)

^c LIPHY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; CATHODOLUMINESCENCE; ELECTRIC FIELD EFFECTS; GALLIUM NITRIDE; LIGHT EMISSION; PHOTOLUMINESCENCE; SELF ASSEMBLY; THERMAL EFFECTS;

CARRIER LOCALIZATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037164777     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1530375     Document Type: Article

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