Status of LWIR HgCdTe-on-silicon FPA technology

Journal of Electronic Materials

Volumn 37, Issue 9, 2008, Pages 1184-1188

  Carmody, M ^a   Pasko, J G ^a   Edwall, D ^a   Piquette, E ^a   Kangas, M ^a   Freeman, S ^a   Arias, J ^a   Jacobs, R ^b   Mason, W ^b   Stoltz, A ^b   Chen, Y ^c   Dhar, N K ^c  

^a TELEDYNE SCIENTIFIC COMPANY   (United States)

^b U S ARMY   (United States)

^c U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

FPA; HgCdTe; Infrared; LWIR; MBE; Silicon

Indexed keywords

COST SAVINGS; FPA; FPA TECHNOLOGY; HGCDTE; HGCDTE DETECTORS; INFRARED; LATTICE MISMATCHING; LONG-WAVELENGTH INFRARED; LOW COSTS; LWIR; MBE; POTENTIAL BENEFITS; SILICON SUBSTRATES; TECHNICAL CHALLENGES;

CADMIUM COMPOUNDS; DEFECT DENSITY; EPITAXIAL GROWTH; INFRARED DETECTORS; LATTICE MISMATCH; LITHOGRAPHY; MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; NONMETALS; SILICON; SUBSTRATES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 51849168193     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-008-0434-3     Document Type: Article

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