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Volumn 2, Issue 7, 2010, Pages 1128-1133
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The influence of doping on the device characteristics of In 0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors
a
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Author keywords
[No Author keywords available]
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Indexed keywords
ACTIVE REGIONS;
COMPARATIVE STUDIES;
CONDUCTION BAND OFFSET;
DETECTOR STRUCTURE;
DEVICE CHARACTERISTICS;
DEVICE PARAMETERS;
DOPED DEVICES;
DOPING CONCENTRATION;
INFRARED PHOTODETECTOR;
QUANTUM DOT;
QUANTUM WELL;
QUANTUM-WELL STATE;
RESPONSIVITY;
WETTING LAYER;
WETTING LAYER STATE;
DOPING (ADDITIVES);
ELECTRON MOBILITY;
GALLIUM;
HETEROJUNCTIONS;
INDIUM;
INFRARED DETECTORS;
OPTICAL WAVEGUIDES;
OPTOELECTRONIC DEVICES;
PHOTODETECTORS;
SEMICONDUCTOR QUANTUM DOTS;
SEMICONDUCTOR QUANTUM WELLS;
WETTING;
QUANTUM WELL INFRARED PHOTODETECTORS;
GALLIUM;
GALLIUM ARSENIDE;
INDIUM;
ORGANOARSENIC DERIVATIVE;
QUANTUM DOT;
ARTICLE;
CHEMISTRY;
COLD;
INFRARED SPECTROPHOTOMETRY;
ARSENICALS;
COLD TEMPERATURE;
GALLIUM;
INDIUM;
QUANTUM DOTS;
SPECTROPHOTOMETRY, INFRARED;
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EID: 77954600969
PISSN: 20403364
EISSN: 20403372
Source Type: Journal
DOI: 10.1039/c0nr00128g Document Type: Article |
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Times cited : (6)
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References (12)
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