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Volumn 91, Issue 7, 2007, Pages

Effect of GaP strain compensation layers on rapid thermally annealed InGaAsGaAs quantum dot infrared photodetectors grown by metal-organic chemical-vapor deposition

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM COMPOUNDS; STRAIN; THERMAL EFFECTS;

EID: 34548010528     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2770765     Document Type: Article
Times cited : (4)

References (13)
  • 3
    • 0003944193 scopus 로고    scopus 로고
    • Optoelectronic Properties of Semiconductors and Superlattices Vol. edited by E. H.Li (Gordon and Breach, Amsterdam
    • Semiconductor Quantum Wells Intermixing, Optoelectronic Properties of Semiconductors and Superlattices Vol. 8, edited by, E. H. Li, (Gordon and Breach, Amsterdam, 2000).
    • (2000) Semiconductor Quantum Wells Intermixing , vol.8


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.