Effects of Si doping on normal incidence InAs In0.15 Ga0.85 As dots-in-well quantum dot infrared photodetectors

Journal of Applied Physics

Volumn 99, Issue 8, 2006, Pages

  Attaluri, R S ^a   Annamalai, S ^a   Posani, K T ^a   Stintz, A ^a   Krishna, S ^a  

^a University of New Mexico   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DARK CURRENT; INFRARED PHOTODETECTOR TEMPERATURE; NORMAL INCIDENCE;

DOPING (ADDITIVES); ELECTRONS; INFRARED DETECTORS; PHOTOCURRENTS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SILICON;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33646752107     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2189973     Document Type: Article

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