Simulation and experimental investigation of parallel connected IGBTs

Proceedings of the IEEE International Conference on Industrial Technology

Volumn , Issue , 2010, Pages 824-831

  Alvarez, Rodrigo ^a   Fink, Karsten ^b   Bernet, Steffen ^a  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DISTRIBUTION; CURRENT UNBALANCE; DELAY TIME; EXPERIMENTAL INVESTIGATIONS; GATE RESISTANCE; HIGH POWER APPLICATIONS; HIGH-POWER; LARGE POWER; MAXIMUM CURRENT DENSITY; NON DESTRUCTIVE; PARALLEL CONNECTIONS; PARALLEL DEVICES; PARALLEL-CONNECTED; STATE OF THE ART; TEST SETS; VARYING PARAMETERS; VOLTAGE SOURCE CONVERTERS;

ELECTRIC CONNECTORS; ELECTRIC CURRENT DISTRIBUTION MEASUREMENT; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); PARAMETER EXTRACTION; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE;

SEMICONDUCTOR DEVICES;

EID: 77954388779     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIT.2010.5472617     Document Type: Conference Paper

References (20)

1. V. John, B.-S. Suh, and T. Lipo, "High performance active gate drive for high power igbts," in Industry Applications Conference, 1998. Thirty- Third IAS Annual Meeting. The 1998 IEEE, vol. 2, Oct 1998, pp. 1519-1529 vol.2.
2. J. Nelson, G. Venkataramanan, and B. Beihoff, "Investigation of parallel operation of igbts," in Industry Applications Conference, 2002. 37th IAS Annual Meeting. Conference Record of the, vol. 4, 2002, pp. 2585-2591 vol.4.
3. H. Yang, W. Xuhui, G. Lingyun, W. Li, and Z. Feng, "Investigation of parallel connection of igbts," in Electrical Machines and Systems, 2005. ICEMS 2005. Proceedings of the Eighth International Conference on, vol. 1, Sept. 2005, pp. 833-835 Vol. 1.
4. J.-F. Chen, J.-N. Lin, and T.-H. Ai, "The techniques of the serial and paralleled igbts," in Industrial Electronics, Control, and Instrumentation, 1996., Proceedings of the 1996 IEEE IECON 22nd International Conference on, vol. 2, Aug 1996, pp. 999-1004 vol.2.
5. H. Miyazaki, H. Fukumoto, S. Sugiyama, M. Tachikawa, and N. Azusawa, "Neutral-point-clamped inverter with parallel driving of igbts for industrial applications," Industry Applications, IEEE Transactions on, vol. 36, no. 1, pp. 146-151, Jan/Feb 2000.
6. C. Abbate, G. Busatto, L. Fratelli, F. Iannuzzo, B. Cascone, and G. Giannini, "Series connection of high power igbt modules for traction applications," in Power Electronics and Applications, 2005 European Conference on, 0-0 2005, pp. 8 pp.-P.8.
7. J. Thalheim, N. Felber, and W. Fichtner, "A new approach for controlling series-connected igbt modules," in Circuits and Systems, 2001. ISCAS 2001. The 2001 IEEE International Symposium on, vol. 3, May 2001, pp. 69-72 vol. 2.
8. S. Musumeci, R. Pagano, A. Raciti, F. Frisina, and M. Melito, "Parallel strings of igbts in short circuit transients: analysis of the parameter in- fluence and experimental behavior," in IECON 02 [Industrial Electronics Society, IEEE 2002 28th Annual Conference of the], vol. 1, Nov. 2002, pp. 555-560 vol.1.
9. Y. Wang, M. Abu Khaizaran, and P. Palmer, "Controlled switching of high voltage igbts in series," in Electron Devices and Solid-State Circuits, 2003 IEEE Conference on, Dec. 2003, pp. 297-300.
10. P. Hofer, N. Karrer, and C. Gerster, "Paralleling intelligent igbt power modules with active gate-controlled current balancing," in Power Electronics Specialists Conference, 1996. PESC '96 Record., 27th Annual IEEE, vol. 2, Jun 1996, pp. 1312-1316 vol.2.
11. C. Gerster, P. Hofer, and N. Karrer, "Gate-control strategies for snubberless operation of series connected igbts," in Power Electronics Specialists Conference, 1996. PESC '96 Record., 27th Annual IEEE, vol. 2, Jun 1996, pp. 1739-1742 vol.2.
12. P. Hofer-Noser and N. Karrer, "Monitoring of paralleled igbt/diode modules," Power Electronics, IEEE Transactions on, vol. 14, no. 3, pp. 438-444, May 1999.
13. D. Zhou and D. Braun, "A practical series connection technique for multiple igbt devices," in Power Electronics Specialists Conference, 2001. PESC. 2001 IEEE 32nd Annual, vol. 4, 2001, pp. 2151-2155 vol. 4.
14. D. Bortis, J. Biela, and J. Kolar, "Active gate control for current balancing in parallel connected igbt modules in solid state modulators," in Pulsed Power Conference, 2007 16th IEEE International, vol. 2, June 2007, pp. 1323-1326.
15. M. Wolz, "Technical information fs450r17ke3," in 2004, Germany, 2004.
16. C. Didier, S. Hartmann, and U. Schlapbach, "Numerical simulations for electromagnetic power module design," in Proc. of the 18th International Symposium on Power Semiconductor Devices and ICs, Naples, Italy, 2006.
17. R. Kraus, P. Turkes, and J. Sigg, "Physics-based models of power semiconductor devices for the circuit simulator spice," in Proc. PESC1998, Fukuoka, japan, 1998.
18. A. R. J. Hefner and D. M. Diebolt, "An experimentally verified igbt model implemented in the saber circuit simulator." IEEE Trans. on Power Electronics., 1994.
19. A. R. J. Hefner, "An improved understanding for the transient operation of the power insulated gate bipolar transistor(igbt)." IEEE Trans. on Power Electronics, 1990.
20. S. Tschirley and S. Bernet, "Automated testing of high power semiconductor devices," in Proc. of International Conference on Power Electronics and Intelligent Control for Energy Conservation, Warsaw, Poland, 2005.