Monitoring of paralleled IGBT/diode modules

IEEE Transactions on Power Electronics

Volumn 14, Issue 3, 1999, Pages 438-444

  Hofer Noser, Patrick ^a   Karrer, Nicolas ^b  

^a ATLANTIS Solar System Ltd   (Switzerland)

^b ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

AVAILABILITY; COST EFFECTIVENESS; ELECTRIC CONVERTERS; ELECTRIC LOSSES; MONITORING; RELIABILITY; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR SWITCHES;

INSULATED GATE BIPOLAR TRANSISTOR; PARALLELING; POWER MODULE; POWER SEMICONDUCTOR DEVICES; POWER SEMICONDUCTOR SWITCHES;

BIPOLAR TRANSISTORS;

EID: 0032650917     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/63.761687     Document Type: Article

References (11)

1. E. Gatti et al., "Large power voltage source IGBT inverters for industrial application," in Power Electronics Specialists Conf., 1996, vol. 2, pp. 1059-1064.
2. Mitsubishi, Power Module Databook, 1993, pp. 1.23-1.30.
3. P. Hofer-Noser, Parallelschaltung von Leistungshalbleitern mit Steuerseitig Geregelter Stromverteilung. Konstanz, Germany: Hartung-Gorre, 1997, pp. 41-88.
4. Semikron, Semikron Power Electronics, 2nd ed., 1998, pp. B7-45.
5. C. Gerster and P. Hofer, "Gate-controlled dv/dt- and di/dt-limitation in high power IGBT converters," EPE J., vol. 5, nos. 3/4, pp. 11-16, Jan 1996.
6. P. Hofer-Noser and N. Karrer, "Modeling of power converters using paralleled intelligent IGBT power modules," in European Power Electronics Conf., 1997, vol. 2, pp. 256-261.
7. M. Oljaca, "Reduction of IGBT switching losses through innovative gate control," in Power Conversion & Intelligent Motion PCIM'90 EUROPE Proc. 20th Int. Power Conversion Conf., June 25-29, 1990, Munich, West Germany, pp. 83-93.
8. A. Galluzzo et al., "Switching characteristic improvement of modern gate-controlled devices," in European Power Electronics Conf., Brighton, U.K., 1993, vol. 1, pp. 374-379.
9. C. Licitra et al., "A new driving circuit for IGBT devices," IEEE Trans. Power Electron., vol. 10, pp. 373-378, May 1995.
10. S. Rael, Ch. Schaeffer, and J. P. Ferrieux, "Etude de la mise en parallele d'igbt," Internal Publication of the Laboratoire d'Electronice Generale (LEG) Grenoble, Grenoble, France, 1994.
11. P. Hofer, Ch. Gerster, and N. Karrer, "Paralleling intelligent IGBT power modules with active gate-controlled current balancing," in Power Electronics Specialists Conf., 1996, vol. 2, pp. 1312-1316.