Chemistry of thin film formation and stability during praseodymium oxide deposition on Si(111) under oxygen-deficient conditions

Surface Science

Volumn 604, Issue 15-16, 2010, Pages 1287-1293

  Schaefer, A ^a   Sandell, A ^b   Walle, L E ^c   Zielasek, V ^a   Schowalter, M ^a   Rosenauer, A ^a   Baumer M ^a  

^a UNIVERSITY OF BREMEN   (Germany)

^b UPPSALA UNIVERSITY   (Sweden)

^c NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

Author keywords

Epitaxy; Praseodymium oxide; Silicate; Silicide; Silicon; Thin film

Indexed keywords

AS-DEPOSITED FILMS; BANDBENDING; CORE LEVELS; CROSS-SECTIONAL TEM; DEPOSITED MATERIALS; EPITAXY; FILM COMPOSITION; GROWING FILMS; INTERFACE FORMATION; LOW RATES; PHOTOEMISSION SPECTROSCOPY; PRASEODYMIUM OXIDE; PRASEODYMIUM OXIDES; ROOM TEMPERATURE; SI (1 1 1); SILICON (111); SILICON THIN FILM; SUBMONOLAYER; TEM; THIN FILM FORMATION; VALENCE BAND SPECTRA;

CRYSTAL GROWTH; DEPOSITION; EMISSION SPECTROSCOPY; MONOLAYERS; OXIDE FILMS; OXYGEN; PRASEODYMIUM; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICATES; SILICIDES; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; VAPOR DEPOSITION;

FILM GROWTH;

EID: 77954244858     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2010.04.016     Document Type: Article

References (26)

1. T. Schroeder, A. Giussani, J. Dabrowski, P. Zaumseil, H.J. Müssig, O. Seifarth, and P. Storck Phys. Status Solidi C 6 2009 653
2. E.J. Tarsa, J.S. Speck, and D.R. Mc Appl. Phys. Lett. 63 1993 539
3. H.J. Osten, J.P. Liu, E. Bugiel, H.J. Müssig, and P. Zaumseil Mater. Sci. Eng., B 87 2001 297
4. L. Libralesso, T. Schroeder, T.L. Lee, and J. Zegenhagen Surf. Sci. 598 2005 L347
5. N.M. Jeutter, M. Hennemeyer, R. Stark, A. Stierle, and W. Moritz Mater. Sci. Semicond. Process. 9 2006 1079
6. T. Schroeder J. Appl. Phys. 97 2005 074906
7. A. Schaefer, T. Schroeder, G. Lupina, Y. Borchert, J. Dabrowski, C. Wenger, and M. Bäumer Surf. Sci. 601 2007 1473
8. H.J. Osten, E. Bugiel, and A. Fissel Solid State Electron. 47 2003 2161
9. N. Jeutter, A. Sidorenko, A. Stierle, and W. Moritz Appl. Phys. Lett. 90 2007 062906
10. T. Watahiki, B.P. Tinkham, B. Jenichen, R. Shayduk, W. Braun, and H. Ploog Appl. Surf. Sci. 255 2008 758
11. A. Schaefer Phys. Rev. B 80 2009 045414
12. T. Watahiki, W. Braun, and H. Riechert J. Vac. Sci. Technol., B 21 2009 262
13. T. Schroeder, T.L. Lee, J. Zegenhagen, C. Wenger, P. Zaumseil, and H.J. Müssig Appl. Phys. Lett. 85 2004 1229
14. A. Fissel, J. Dabrowski, and H.J. Osten J. Appl. Phys. 91 2002 8986
15. T. Schroeder, P. Zaumseil, G. Weidner, G. Lupina, C. Wenger, H.J. Müssig, and P. Storck J. Appl. Phys. 98 2005 123513
16. C.J. Karlsson, E. Landemark, Y.-C. Chao, and R.I.G. Uhrberg Phys. Rev. B 50 1994 5767
17. F.P. Netzer J. Phys. Condens. Matter. 7 1995 991
18. A. Sandell, P.G. Karlsson, J.H. Richter, J. Blomquist, P. Uvdal, and T.M. Grehk Appl. Phys. Lett. 88 2006 132905
19. J.H. Richter, P.G. Karlsson, B. Sanyal, J. Blomquist, P. Uvdal, and A. Sandell J. Appl. Phys. 101 2007 104120
20. G. Lupina, T. Schroeder, J. Dabrowski, C. Wenger, A.U. Mane, H.J. Müssig, P. Hofmann, and D. Schmeisser J. Appl. Phys. 99 2006 114109
21. G. Adachi, and N. Imanaka Chem. Rev. 98 1998 1479
22. F.J. Himpsel, F.R. McFeely, A. Talebibrahimi, J.A. Yarmoff, and G. Hollinger Phys. Rev. B 38 1988 6084
23. F. Jolly, F. Rochet, G. Dufour, C. Grupp, and A. Taleb-Ibrahimi J. Non-Cryst. Solids 280 2001 150
24. R. Hofmann, W.A. Henle, H. Öfner, M.G. Ramsey, F.P. Netzer, W. Braun, and K. Horn Phys. Rev. B 47 1993 10407
25. A. Fissel, Z. Elassar, O. Kirfel, E. Bugiel, M. Czernohorsky, and H.J. Osten J. Appl. Phys. 99 2006 074105
26. K.N. Tu, R.D. Thompson, and B.Y. Tsaur Appl. Phys. Lett. 38 1981 626