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Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 28, Issue 4, 2010, Pages 693-696

Ge doped HfO2 thin films investigated by x-ray absorption spectroscopy

(5) Miotti, Leonardo a Bastos, Karen P a Lucovsky, Gerald a Radtke, Cláudio b Nordlund, Dennis c

a NORTH CAROLINA STATE UNIVERSITY (United States)

b FEDERAL UNIVERSITY OF RIO GRANDE DO SUL (Brazil)

c SLAC NATIONAL ACCELERATOR LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC CONCENTRATION; ATOMIC STRUCTURE; GE CONCENTRATIONS; REMOTE PLASMA CHEMICAL VAPOR DEPOSITIONS; RUTHERFORD BACK-SCATTERING SPECTROMETRY; SI(1 0 0); TETRAGONAL PHASE;

ABSORPTION; ATOMIC SPECTROSCOPY; CRYSTAL ATOMIC STRUCTURE; GERMANIUM; HAFNIUM; HAFNIUM COMPOUNDS; PLASMA DEPOSITION; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; THIN FILMS; VAPOR DEPOSITION; X RAY ABSORPTION; X RAY ABSORPTION SPECTROSCOPY;

ABSORPTION SPECTROSCOPY;

EID: 77954210172 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.3430562 Document Type: Conference Paper

Times cited : (5)

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