Direct observation of amophization in load rate dependent nanoindentation studies of crystalline Si

Applied Physics Letters

Volumn 96, Issue 25, 2010, Pages

  Das, C R ^a   Dhara, S ^a   Jeng, Yeau Ren ^b   Tsai, Ping Chi ^b   Hsu, H C ^c,d   Raj, Baldev ^a   Bhaduri, A K ^a   Albert, S K ^a   Tyagi, A K ^a   Chen, L C ^d   Chen, K H ^d,e  

^a INDIRA GANDHI CENTRE FOR ATOMIC RESEARCH   (India)

^b NATIONAL CHUNG CHENG UNIVERSITY   (Taiwan)

^c NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^d NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^e INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS PHASE; CONSTANT VOLUMES; CRYSTALLINE SI; DIRECT OBSERVATION; ELASTIC RECOVERY; EX SITU; LOAD RATE; LOW LOAD; MOLECULAR DYNAMIC SIMULATIONS;

AMORPHOUS SILICON; COMPUTER SIMULATION; CRYSTALLINE MATERIALS; MOLECULAR DYNAMICS;

NANOINDENTATION;

EID: 77954076150     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3456380     Document Type: Article

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