Characteristics of thick m-plane ingan films grown on ZnO substrates using room temperature epitaxial buffer layers

Applied Physics Express

Volumn 3, Issue 6, 2010, Pages

  Shimomoto, Kazuma ^a   Kobayashi, Atsushi ^b   Ueno, Kohei ^a   Ohta, Jitsuo ^a   Oshima, Masaharu ^b,c   Fujioka, Hiroshi ^a,c  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRAIN; EPITAXIAL BUFFER LAYERS; HIGH-EFFICIENCY SOLAR CELLS; LASER DIODES; LATTICE-MATCHED; LOW THRESHOLDS; M-PLANE; RECIPROCAL SPACE MAPPING; ROOM TEMPERATURE; STRUCTURAL AND OPTICAL PROPERTIES; ZNO SUBSTRATE;

EPITAXIAL FILMS; GALLIUM NITRIDE; METALLIC FILMS; OPTICAL PROPERTIES; PHASE SEPARATION; X RAY DIFFRACTION; ZINC OXIDE;

GALLIUM ALLOYS;

EID: 77953481118     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.3.061001     Document Type: Article

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