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Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7636, Issue , 2010, Pages

EUV flare correction for the half-pitch 22nm node

(4) Arisawa, Yukiyasu a Aoyama, Hajime a Uno, Taiga a Tanaka, Toshihiko a

a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC (Japan)

Author keywords

correction; EUVL; flare; OPC; PSF

Indexed keywords

32-NM NODE; AERIAL IMAGE CONTRAST; CD CONTROL; CORRECTION SCHEMES; CRITICAL ISSUES; EXPOSURE LATITUDE; GRIDDING; LITHOGRAPHY PROCESS; MODEL-BASED OPC; NEXT GENERATION LITHOGRAPHY; PATTERN DENSITY; POINT-SPREAD FUNCTIONS; PROCESS WINDOW; RULE BASED; RUNTIMES; SCATTERED LIGHT; USE-MODEL;

NANOTECHNOLOGY; OPTICAL TRANSFER FUNCTION; PHOTORESISTS;

LITHOGRAPHY;

EID: 77953433300 PISSN: 0277786X EISSN: None Source Type: Conference Proceeding
DOI: 10.1117/12.846487 Document Type: Conference Paper

Times cited : (18)

References (6)

1
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- Arisawa, Y.¹ Aoyama, H.² Uno, T.³ Tanaka, T.⁴ Mori, I.⁵

2
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- Process liability evaluation for EUVL
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- (2009) Proc. SPIE , vol.7271 , pp. 727120
- Aoyama, H.¹ Tawarayama, K.² Tanaka, Y.³ Kawamura, D.⁴ Arisawa, Y.⁵ Uno, T.⁶ Kamo, T.⁷ Tanaka, T.⁸ Itani, T.⁹ Tanaka, H.¹⁰ Nakajima, Y.¹¹ Inanami, R.¹² Takai, K.¹³ Murano, K.¹⁴ Koshiba, T.¹⁵ Hashimoto, K.¹⁶ Mori, I.¹⁷

3
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- Applicability of device fabrication for hp-35-nm interconnect with extreme ultraviolet lithography
- Aoyama, H., Tanaka, Y., Tanaka, Y., Tawarayama, K., Arisawa, Y., Uno, T., Kamo, T., Kawamura, D., Matsunaga, K., Tanaka, T., Tanaka, H., Nakamura, N., Soda, E., Oda, N., Saito, S. and Mori, I., "Applicability of device fabrication for hp-35-nm interconnect with extreme ultraviolet lithography," Proc. SPIE 7636, (2010).
- (2010) Proc. SPIE , vol.7636
- Aoyama, H.¹ Tanaka, Y.² Tanaka, Y.³ Tawarayama, K.⁴ Arisawa, Y.⁵ Uno, T.⁶ Kamo, T.⁷ Kawamura, D.⁸ Matsunaga, K.⁹ Tanaka, T.¹⁰ Tanaka, H.¹¹ Nakamura, N.¹² Soda, E.¹³ Oda, N.¹⁴ Saito, S.¹⁵ Mori, I.¹⁶

4
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- Full chip model based correction of flare-induced linewidth variation
- DOI 10.1117/12.569175, 76, 24th Annual BACUS Symposium on Photomask Technology
- Word, J., Belledent, J., Trouiller, Y., Maurer, W., Granik, Y., Sahouria, E. and Toublan, O., "Full-chip-model-based correction of flare-induced linewidth variation," Proc. SPIE 5567, 700-710 (2004). (Pubitemid 40761694)
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5
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- Layout compensation for EUV flare
- M.
- Schellenberg, F., M., Word, J. and Toublan, O., "Layout compensation for EUV flare," Proc. SPIE 5751, 320-329 (2005).
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- Schellenberg, F.¹ Word, J.² Toublan, O.³

6
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- Requirements and results of a full-field EUV OPC flow
- Jang, S., Zavyalova, L., Ward, B. and Lucas, K., "Requirements and results of a full-field EUV OPC flow," Proc. SPIE 7271, 72711A (2009).
- (2009) Proc. SPIE , vol.7271
- Jang, S.¹ Zavyalova, L.² Ward, B.³ Lucas, K.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.