Boron lattice site location in (BGa)As and (BGa)P thin films studied using RBS and NRA with a channeled He+ ion beam

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 268, Issue 11-12, 2010, Pages 2069-2073

  Spemann, D ^a   Gottschalch, V ^a  

^a UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

(BGa)As; (BGa)P; Channeling; Lattice site location; NRA; RBS

Indexed keywords

BORON CONCENTRATIONS; BORON LATTICE; CONCENTRATION OF; CRYSTAL QUALITIES; DECHANNELING RATES; GAAS; INTERSTITIAL BORON; LATTICE SITES; LOW PRESSURES; METAL-ORGANIC; MOVPE; NUCLEAR REACTIONS; RBS/CHANNELING; SUBSTITUTIONAL LATTICE SITES; VAPOUR-PHASE;

BEAM PLASMA INTERACTIONS; BORON; CONCENTRATION (PROCESS); CRYSTAL GROWTH; GALLIUM ALLOYS; GALLIUM ARSENIDE; ION BEAMS; ION BOMBARDMENT; IONS; MOLECULAR VIBRATIONS; NUCLEAR ENERGY; NUCLEAR PHYSICS; NUCLEAR REACTORS; PROTONS; SEMICONDUCTING GALLIUM; THIN FILMS;

BORON COMPOUNDS;

EID: 77953142355     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2010.02.028     Document Type: Article

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