Heteroepitaxial growth of boronphosphide III-V semiconductor on silicon by organometallic chemical vapor deposition

Journal of Ceramic Processing Research

Volumn 4, Issue 2, 2003, Pages 80-83

  Udagawa, Takashi ^a   Shimaoka, Goro ^b  

^a High Performance Materials Department   (Japan)

^b SHIZUOKA UNIVERSITY   (Japan)

Author keywords

Boronphosphide; Epitaxial growth; Heterostructure; III V compound semiconductor; MOCVD; Orientation; Si; Twin

Indexed keywords

BORON DERIVATIVE; BORON PHOSPHIDE; ORGANOMETALLIC COMPOUND; OXYGEN; PHOSPHINE; PHOSPHORUS; SILICON; UNCLASSIFIED DRUG;

ARTICLE; ATMOSPHERIC PRESSURE; CONDUCTANCE; CRYSTALLOGRAPHY; ELECTRON DIFFRACTION; HIGH TEMPERATURE PROCEDURES; ROOM TEMPERATURE; SEMICONDUCTOR; VAPOR; X RAY DIFFRACTION;

EID: 0141462178     PISSN: 12299162     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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