메뉴 건너뛰기




Volumn 44, Issue 1 B, 2005, Pages 681-683

Organometallic chemical vapor deposition growth of heterostructure of wide band gap and transparent boron phosphide on silicon

Author keywords

Boron phosphide; Epitaxy; III V compound semiconductor; MOCVD; Optical characterization; Silicon

Indexed keywords

ATMOSPHERIC PRESSURE; BORON COMPOUNDS; CHARACTERIZATION; EPITAXIAL GROWTH; LIGHT EXTINCTION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SILICON; SUBSTRATES;

EID: 17044403799     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.681     Document Type: Conference Paper
Times cited : (21)

References (15)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.