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Volumn 44, Issue 1 B, 2005, Pages 681-683
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Organometallic chemical vapor deposition growth of heterostructure of wide band gap and transparent boron phosphide on silicon
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Author keywords
Boron phosphide; Epitaxy; III V compound semiconductor; MOCVD; Optical characterization; Silicon
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Indexed keywords
ATMOSPHERIC PRESSURE;
BORON COMPOUNDS;
CHARACTERIZATION;
EPITAXIAL GROWTH;
LIGHT EXTINCTION;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
SILICON;
SUBSTRATES;
BORON PHOSPHIDE;
EXTINCTION COEFFICIENT;
III-V COMPOUND SEMICONDUCTOR;
OPTICAL CHARACTERIZATION;
HETEROJUNCTIONS;
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EID: 17044403799
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/JJAP.44.681 Document Type: Conference Paper |
Times cited : (21)
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References (15)
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