Effect of manganese inclusion on structural, optical and electrical properties of ZnO thin films

Journal of Alloys and Compounds

Volumn 500, Issue 1, 2010, Pages 138-143

  Ubale, A U ^a   Deshpande, V P ^a  

^a GOVERNMENT VIDARBHA INSTITUTE OF SCIENCE AND HUMANITIES   (India)

Author keywords

Electrical properties; Optical properties; Thin films

Indexed keywords

BAND GAP ENERGY; DOPED ZNO; ELECTRICAL PROPERTIES; ELECTRICAL PROPERTY; ELECTRICAL RESISTIVITY MEASUREMENTS; HEXAGONAL WURTZITE; MANGANESE INCORPORATION; NANOCRYSTALLINES; OPTICAL ABSORPTION STUDIES; OPTICAL AND ELECTRICAL PROPERTIES; SCANNING ELECTRON MICROGRAPHS; SEMICONDUCTOR TECHNOLOGY; SPRAY-DEPOSITED; ZNO; ZNO THIN FILM;

CRYSTAL STRUCTURE; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; MANGANESE; METALLIC FILMS; OPTICAL PROPERTIES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICE MANUFACTURE; THIN FILMS; VAPOR DEPOSITION; X RAY DIFFRACTION; ZINC OXIDE; ZINC SULFIDE;

OPTICAL FILMS;

EID: 77953139161     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2010.04.004     Document Type: Article

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