High temperature chemical and physical changes of the HVPE-prepared GaN semiconductor

Materials Chemistry and Physics

Volumn 122, Issue 2-3, 2010, Pages 537-543

  Drygas, Mariusz ^a   Bucko, Miroslaw M ^a   Olejniczak, Zbigniew ^b   Grzegory, Izabella ^c   Janik, Jerzy F ^a  

^a AGH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Poland)

^b INSTITUTE OF NUCLEAR PHYSICS   (Poland)

^c INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

Gallium nitride; GaN; HVPE; NMR; Stability; TGA; XRD

Indexed keywords

GASPHASE; HIGH TEMPERATURE; HVPE; KNIGHT SHIFTS; MAS-NMR SPECTROSCOPY; NANO POWDERS; PHYSICAL CHANGES; POLYCRYSTALLINE; POWDER XRD; RECRYSTALLIZATIONS; SEM; STRUCTURE AND MORPHOLOGY; XRD;

GALLIUM ALLOYS; GRAIN BOUNDARIES; NANOSTRUCTURED MATERIALS; NUCLEAR MAGNETIC RESONANCE SPECTROSCOPY; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR GROWTH;

GALLIUM NITRIDE;

EID: 77953138807     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2010.03.043     Document Type: Article

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