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Volumn 311, Issue 1, 2008, Pages 185-189
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Experimental investigation of the enthalpy, entropy, and free energy of formation of GaN
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Author keywords
A1. Phase equilibria; A2. Growth from melt; B1. Nitrides; B2. Semiconducting gallium compounds
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Indexed keywords
ENTHALPY;
ENTROPY;
FREE ENERGY;
GALLIUM ALLOYS;
GALLIUM COMPOUNDS;
GALLIUM NITRIDE;
GROWTH (MATERIALS);
NITRIDES;
PHASE EQUILIBRIA;
PRESSURE MEASUREMENT;
SEMICONDUCTING GALLIUM;
SEMICONDUCTOR GROWTH;
STANDARDS;
A1. PHASE EQUILIBRIA;
A2. GROWTH FROM MELT;
ABSOLUTE ENTROPIES;
B1. NITRIDES;
B2. SEMICONDUCTING GALLIUM COMPOUNDS;
EQUILIBRIUM PRESSURES;
EXPERIMENTAL INVESTIGATIONS;
GAS FLOWS;
STANDARD ENTHALPY OF FORMATIONS;
STANDARD ENTROPIES;
UPPER BOUNDS;
SEMICONDUCTING GALLIUM COMPOUNDS;
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EID: 57649195049
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2008.09.203 Document Type: Article |
Times cited : (14)
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References (22)
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