Experimental investigation of the enthalpy, entropy, and free energy of formation of GaN

Journal of Crystal Growth

Volumn 311, Issue 1, 2008, Pages 185-189

  Peshek, Timothy J ^a   Angus, John C ^b   Kash, Kathleen ^a  

^a CASE WESTERN RESERVE UNIVERSITY   (United States)

^b Case Western Reserve University   (United States)

Author keywords

A1. Phase equilibria; A2. Growth from melt; B1. Nitrides; B2. Semiconducting gallium compounds

Indexed keywords

ENTHALPY; ENTROPY; FREE ENERGY; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; GROWTH (MATERIALS); NITRIDES; PHASE EQUILIBRIA; PRESSURE MEASUREMENT; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; STANDARDS;

A1. PHASE EQUILIBRIA; A2. GROWTH FROM MELT; ABSOLUTE ENTROPIES; B1. NITRIDES; B2. SEMICONDUCTING GALLIUM COMPOUNDS; EQUILIBRIUM PRESSURES; EXPERIMENTAL INVESTIGATIONS; GAS FLOWS; STANDARD ENTHALPY OF FORMATIONS; STANDARD ENTROPIES; UPPER BOUNDS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 57649195049     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.09.203     Document Type: Article

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