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Volumn 311, Issue 1, 2008, Pages 185-189

Experimental investigation of the enthalpy, entropy, and free energy of formation of GaN

Author keywords

A1. Phase equilibria; A2. Growth from melt; B1. Nitrides; B2. Semiconducting gallium compounds

Indexed keywords

ENTHALPY; ENTROPY; FREE ENERGY; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; GROWTH (MATERIALS); NITRIDES; PHASE EQUILIBRIA; PRESSURE MEASUREMENT; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; STANDARDS;

EID: 57649195049     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.09.203     Document Type: Article
Times cited : (14)

References (22)
  • 2
    • 57649185320 scopus 로고    scopus 로고
    • D.D. Wagman, W.H. Evans, V.B. Parker, R.H. Schumm, I. Halow, S.M. Bailey, K.L. Churney, R.L. Nuttal, J. Phys. Chem. Ref. Data 11, 2-131.
    • D.D. Wagman, W.H. Evans, V.B. Parker, R.H. Schumm, I. Halow, S.M. Bailey, K.L. Churney, R.L. Nuttal, J. Phys. Chem. Ref. Data 11, 2-131.
  • 14
    • 57649201246 scopus 로고    scopus 로고
    • S. Markovich, Low pressure growth of single-crystal GaN under a thermal gradient: modeling and reactor design, Master's Thesis, Case Western Reserve University, 2006.
    • S. Markovich, Low pressure growth of single-crystal GaN under a thermal gradient: modeling and reactor design, Master's Thesis, Case Western Reserve University, 2006.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.