Aggregation of interstitial copper atoms in silicon

Materials Science in Semiconductor Processing

Volumn 13, Issue 1, 2010, Pages 29-33

  Lowther, J E ^a  

^a UNIVERSITY OF THE WITWATERSRAND   (South Africa)

Author keywords

Defects; Electronic structure; Silicon; Vibration

Indexed keywords

AB INITIO; ATOMIC RELAXATION; BOND-BREAKING; ELECTRONIC STRUCTURE THEORY; FORMATION ENERGIES; INTERSTITIAL COPPER; INTERSTITIAL CU; INTERSTITIAL POSITIONS; LOCALIZED MODES; SI ATOMS; TETRAHEDRAL GEOMETRY; TRIGONAL SYMMETRY; VIBRATION ENERGIES;

AGGREGATES; ATOMS; DEFECTS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; SILICON;

CRYSTAL ATOMIC STRUCTURE;

EID: 77953135797     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2010.02.003     Document Type: Article

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