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Materials Chemistry and Physics

Volumn 123, Issue 1, 2010, Pages 152-159

Structural, optical and electrical properties of In4Sn3O12 films prepared by pulsed laser deposition

(5) O'Neil, David H a Kuznetsov, Vladimir L a Jacobs, Robert M J a Jones, Martin O a Edwards, Peter P a

a UNIVERSITY OF OXFORD (United Kingdom)

Author keywords

In4Sn3O12; Oxides; Thin films; Transparent conductors; Transport properties

Indexed keywords

ABSORPTION EDGES; CHAMBER PRESSURE; CRYSTALLINITIES; EFFECTIVE MASS; ELECTRON CONCENTRATION; EXTINCTION COEFFICIENTS; HALL EFFECT MEASUREMENT; IN4SN3O12; OPTICAL AND ELECTRICAL PROPERTIES; OXYGEN PRESSURE; PARABOLIC CONDUCTION; PLASMA FREQUENCIES; PLASMON RESONANCES; QUARTZ SUBSTRATE; RED SHIFT; SPECTRAL PROFILE; SUBSTRATE TEMPERATURE; TRANSPARENT CONDUCTING MATERIALS; TRANSPARENT CONDUCTORS; ULTRA-VIOLET; VISIBLE SPECTRA;

CARRIER CONCENTRATION; ELECTRIC PROPERTIES; ELECTRON MOBILITY; GLASS LASERS; HALL EFFECT; MAGNETIC FIELD EFFECTS; ORGANIC POLYMERS; OXIDE MINERALS; OXYGEN; PLASMA WAVES; PULSED LASER DEPOSITION; PULSED LASERS; QUARTZ; REFRACTIVE INDEX; SUBSTRATES; SURFACE ROUGHNESS; THIN FILMS; TIN; TRANSPORT PROPERTIES;

CONDUCTIVE FILMS;

EID: 77953133731 PISSN: 02540584 EISSN: None Source Type: Journal
DOI: 10.1016/j.matchemphys.2010.03.075 Document Type: Article

Times cited : (20)

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